PART |
Description |
Maker |
LBSS138WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
LBSS139WT1G-15 |
Power MOSFET 200 mAmps
|
Leshan Radio Company
|
2N7000ZL1G |
Small Signal MOSFET 200 mAmps, 60 Volts
|
ON Semiconductor
|
2N7000RLRPG 2N7000G 2N7000ZL1G |
Small Signal MOSFET 200 mAmps 60 Volts
|
ON Semiconductor
|
BS107_04 BS107 BS107A BS107AG BS107ARL1 BS107ARL1G |
Small Signal MOSFET 250 mAmps, 200 Volts 30V N-Channel PowerTrench MOSFET
|
ONSEMI[ON Semiconductor]
|
VN0300L/D VN0300L-D |
Small Signal MOSFET 200 mAmps, 60 Volts N-Channel TO-92 Small Signal MOSFET 200 mAmps60 Volts
|
ON Semiconductor
|
MMBF0202PLT1 MMBF0202PL MMBF0202PLT1-D MMBF0202PLT |
Power MOSFET 300 mAmps, 20 Volts P-Channel SOT-23
|
ON Semiconductor
|
MGSF1N02LT1 MGSF1N02LT3 |
Power MOSFET 750 mAmps, 20 Volts N?Channel SOT?3
|
TY Semiconductor Co., Ltd
|
NTES1N02 |
Power MOSFET 50 mAmps, 20 Volts N-Channel(50mA,20V,N沟道增强型MOS场效应管)
|
ON Semiconductor
|
APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|