| PART |
Description |
Maker |
| PHW50NQ15T PHW50NQ15T_1 |
N-channel TrenchMOS(tm) transistor
From old datasheet system
N-channel TrenchMOS transistor 50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Philips
NXP Semiconductors
IXYS, Corp.
|
| PHX9NQ20T PHF9NQ20 PHF9NQ20T PHX9NQ20T127 |
N-channel TrenchMOS(TM) transistor
N-channel TrenchMOS transistor
5.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220, FPAK-3
|
Philips
NXP Semiconductors N.V.
|
| PHD23NQ10T PHP23NQ10T PHB23NQ10T PHB23NQ10T/T3 |
N-channel TrenchMOS transistor 23 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN015-110P PSMN015-110P127 |
Trenchmos (tm) Sta
N-channel TrenchMOS SiliconMAX standard level FET
|
NXP Semiconductors N.V.
|
| PHP191NQ06LT PHB191NQ06LT |
Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology
PHP/PHB191NQ06LT; N-channel Trenchmos (tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHD16N03LT |
N-channel TrenchMOS?/a> logic level FET
N-channel Trenchmos (tm) logic level FET
N-channel TrenchMOS⑩ logic level FET
From old datasheet system
N-channel TrenchMOSlogic level FET 16 A, 30 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PHP23NQ15T PHB23NQ15T PHB_PHP23NQ15T_1 NXPSEMICOND |
N-channel TrenchMOS(tm) transistor
N-channel TrenchMOS transistor
From old datasheet system
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PSMN030-150P PSMN030-150P_1 |
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHK24NQ04LT |
TrenchMOS logic level FET 21200 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012
From old datasheet system
TrenchMOS (tm) logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
| BUK9515-100A BUK9615-100A |
TrenchMOS(TM) transistor Logic level FET
N-Channel Enhancement mode logic Level field-Effect power Transistor
TrenchMOS TM transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
