PART |
Description |
Maker |
MC-4516CB646XF-A10 MC-4516CB646XF-A80 MC-4516CB646 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
MC-4516CB647XF-A75 MC-4516CB647EF-A75 MC-4516CB647 |
16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory
|
MC-4516CA727XFA-A75 MC-4516CA727XFA |
16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 1,60072位同步动态随机存储器模块无缓冲型 CAP 1.5UF 600VDC POLY FILM AXIAL
|
Elpida Memory, Inc.
|
IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc 天津新技术产业园区管理委员会 INTEGRATED SILICON SOLUTION INC
|
HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM 16M x 4 Bit 8k EDO DRAM 16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
MSM56V16160D MSM56V16160DH |
2-Bank 512K×16 Synchronous Dynamic RAM(212K×16动态RAM) 2-Bank x 524288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
|
MK32VT1632-10YC |
16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块) From old datasheet system 16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI SEMICONDUCTOR CO., LTD.
|
MK31VT464-10YE |
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??4浣??姝ュ???AM妯″?) 4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字64位同步动态RAM模块) 4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字4位同步动态RAM模块) From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
HYB3164400T-60 HYB3164400T-50 HYB3164400J-60 HYB31 |
16M x 4-Bit Dynamic RAM (4k & 8k Refresh)
|
SIEMENS[Siemens Semiconductor Group] Infineon
|
K4S56163PF K4S56163PF-F1L K4S56163PF-F90 K4S56163P |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 LEAD FREE, FBGA-54 16M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 4米16 × 4银行4FBGA移动SDRAM CAP 47UF 350V ELECT EB SMD
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
MC-4216LFG641 |
3.3 V Operation 16M-Word By 72-Bit Dynamic RAM Module(工作电压.3V的动态RAM模块)
|
NEC Corp.
|