PART |
Description |
Maker |
K9F5616Q0B/K9F5616U0B |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
K9F5608UOC K9F5616DOC K9F5616UOC K9F5608QOC |
(K9F5608xOC / K9F5616xOC) 32M x 8 Bit 16M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond http://
|
HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V3222 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模3.332M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
Infineon Technologies AG Infineon Technologies A...
|
TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位(100万16位)的CMOS闪存EEPROM的(1,600 EEPROM中的CMOS与非
|
Toshiba Corporation Toshiba, Corp.
|
K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
Samsung Electronic
|
K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory 32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
K9F5608U0 K9F5608U0A K9F5608U0A-YCB0 K9F5608U0A-YI |
32M x 8 Bit NAND Flash Memory
|
Samsung Electronic Samsung semiconductor
|
TC58V16BFT |
16M-Bit CMOS NAND Flash EPROM
|
Toshiba Semiconductor
|