| PART |
Description |
Maker |
| KVR266X64SC25/128 |
128MB 266MHz DDR Non-ECC CL2.5 SODIMM 128MB66MHz的复员非ECC CL2.5的SODIMM
|
Electronic Theatre Controls, Inc.
|
| KVR400D2N3/1G |
1024MB 400MHz DDR2 Non-ECC CL3 DIMM 1024MB00MHz的DDR2内存非ECC CL3内存
|
Omron Electronics, LLC
|
| SDU01G64H3BF2MT-50R SDU01G64H3BF2MT-60R |
1024MB DDR ?unbuffered DDR1 UDIMM
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184
2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| M391T2953BGZ0-CD5_CC M391T2953BGZ3-CD5_CC M378T335 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
TVS ZENER BIDIRECT 1500W 13V SMC
TVS BIDIRECT 1500W 130V SMC
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3EG72125S335JD3 W3EG72125S202AJD3 W3EG72125S202D3 |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG7264S335BD4 W3EG7264S202AD4 W3EG7264S202BD4 W3 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG2256M72ASSR-JD3 W3EG2256M72ASSR265JD3XG W3EG22 |
4GB - 2x256Mx72 DDR SDRAM REGISTERED ECC, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| W3EG128M72ETSU262D3 W3EG128M72ETSU403JD3 W3EG128M7 |
1GB - 128Mx72 DDR SDRAM UNBUFFERED ECC w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| V827464N24S |
2.5 VOLT 64M x 72 HIGH PERFORMANCE REGISTERED ECC DDR SDRAM MODULE
|
MOSEL[Mosel Vitelic, Corp]
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HDD128M72D18RPW-13A HDD128M72D18RPW-16B HDD128M72D |
DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register
DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块1024Mbyte28Mx72bit），4Mx8BanksK的参考依据。，184Pin与锁相环内存
|
Hanbit Electronics Co.,Ltd.
Hanbit Electronics Co., Ltd.
|
