| PART |
Description |
Maker |
| SST39VF512 SST39VF512-70-4C-NH SST39VF010 SST39VF0 |
512 Kbit/1 Mbit (x8) multi-purpose flash
From old datasheet system
(SST39VFxxx / SST39LFxxx) 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
x8 Flash EEPROM
|
SST[Silicon Storage Technology Inc]
SST[Silicon Storage Technology, Inc]
|
| SST25WF040-40-5I-QAE SST25WF040-40-5I-QAF SST25WF0 |
128K X 8 FLASH 1.8V PROM, PDSO8
512 Kbit / 1 Mbit / 2 Mbit / 4Mbit 1.8V SPI Serial Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc
Microchip Technology Inc.
|
| SST29SF040 SST29SF040-55-4C-NH SST29SF040-55-4C-PH |
From old datasheet system
SST29SF512/010/020/040, SST29VF512/010/020/040 512Kbit/ 1Mbit/ 2Mbit/ 4Mbit (x8) Small-Sector Flash
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
| DD28F032SA DD28F032SA-080 DD28F032SA-070 DD28F032S |
32-MBIT (2 MBIT X 16/ 4 MBIT X 8) FlashFile MEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFileMEMORY
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY 4M X 8 FLASH 12V PROM, 100 ns, PDSO56
|
Intel Corporation
Intel Corp.
PROM
Intel, Corp.
|
| M58BW016FB7T3T |
16 Mbit (512 Kbit x 32, boot block, burst)
|
Micron Technology
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| SST39SF010 SST39SF010-70-4C-NH SST39SF010-70-4C-PH |
From old datasheet system
x8 Flash EEPROM
512 Kbit / 1 Mbit (x8) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
| M48Z128Y-70PM1 M48Z128Y-120PM1 M48Z128Y-85PM1 M48Z |
5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER庐 SRAM
5.0 V or 3.3 V, 1 Mbit (128 Kbit x 8) ZEROPOWER? SRAM
|
STMicroelectronics
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|
