| PART |
Description |
Maker |
| CDSV3-217-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA
|
Comchip Technology
|
| 2SB596 2SB596O 2SB596Y |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 4A条一（c）| TO - 220AB现有
POWER TRANSISTORS(4.0A,80V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| CDSH3-4448C CDSH3-4448A CDSH3-4448S-G CDSH3-4448-G |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=150mW, I-F=250mA
SMD Switching Diodes
|
Comchip Technology
|
| 2SB1260R 2SB1260Q 2SB1241Q 2SB1181P |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SIP 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|园区
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-252AA 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1A条一（c）|52AA
|
Rohm Co., Ltd.
|
| FQD17N08L FQU17N08L FQD17N08LTF FQD17N08LTM |
80V LOGIC N-Channel MOSFET
80V N-Channel Logic Level QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQB70N08 FQI70N08 FQB70N08TM |
FQB70N08 / FQI70N08 80V N-Channel MOSFET
TRANSISTOR,MOSFET,N-CHANNEL,80V V(BR)DSS,70A I(D),TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
|
| 2SD1782K A5800744 |
Power Transistor (80V/ 0.5A)
From old datasheet system
Power Transistor (80V, 0.5A)
|
Rohm
|
| 2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW.
|
USHA India LTD
|
| HIP4086AABZ HIP4086ABZ HIP4086ABZT |
80V, 500mA, 3-Phase MOSFET Driver 1.25A peak turn-off current
80V/0.5A Peak Three Phase Driver; Temperature Range: -25°C to 85°C; Package: 24-SOIC T&R 1.1 A HALF BRDG BASED MOSFET DRIVER, PDSO24
|
Intersil Corporation
|
| MJD44H11 MJD44H11-001 MJD45H11-001 MJD45H11T4G MJD |
SILICON POWER TRANSISTORS 8 A, 80 V, NPN, Si, POWER TRANSISTOR
Power 10A 80V PLA NPN
Power 10A 80V PLA PNP
|
ONSEMI[ON Semiconductor]
|
