| PART |
Description |
Maker |
| W3EG6433S262D3 W3EG6433S-D3 W3EG6433S335JD3 W3EG64 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYS72D64320HU-6-C HYS64D16301GU5C HYS64D16301GU-5- |
DDR SDRAM Modules - 512MB (64Mx72) PC2700 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2700 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC2700 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC2700 1-bank
DDR SDRAM Modules - 512MB (64Mx72) PC3200 2-bank
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank
DDR SDRAM Modules - 256MB (32Mx64) PC3200 1-bank
DDR SDRAM Modules - 128MB (16Mx64) PC3200 1-bank
DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank
DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank
184-Pin Unbuffered Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MT46V16M16CV-6ITK MT46V64M4 MT46V32M8 MT46V32M8P-5 |
256Mb: x4, x8, x16 DDR SDRAM Features
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| K4H561638A-TCA0 K4H561638A-TCA2 K4H561638A-TCB0 K4 |
128Mb F-die DDR SDRAM Specification
256Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
128MB DDR SDRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM
300MHz 2.8V 4M x 32 DDR SDRAM
333MHz 2.8V 4M x 32 DDR SDRAM
350MHz 2.8V 4M x 32 DDR SDRAM
4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.]
Etron Technology Inc.
ETRON[Etron Technology Inc.]
|
| HYMD132645D8J-D4 HYMD132645D8J-D43 HYMD132645D8J-J |
DDR SDRAM - Unbuffered DIMM 256MB
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
Unbuffered DDR SDRAM DIMM
|
Hynix Semiconductor, Inc.
|
| HY5DU561622ALT HY5DU561622ALT-H HY5DU561622ALT-J H |
DDR SDRAM - 256Mb
256M-S DDR SDRAM
256M(32Mx8) DDR Sdram
|
Hynix Semiconductor
|
| HYMD132645BL8-H HYMD132645BL8-M HYMD132645BL8-L HY |
SDRAM|DDR|32MX64|CMOS|DIMM|184PIN|PLASTIC 内存|复员| 32MX64 |的CMOS |内存| 184PIN |塑料
32Mx64|2.5V|M/K/H/L|x16|DDR SDRAM - Unbuffered DIMM 256MB 32Mx64 | 2.5V的| /升| x16 | DDR SDRAM内存- 256MB的无缓冲DIMM
|
SUSUMU Co., Ltd.
|
| HY5DU561622CTP-28 HY5DU56822CT-D43 |
DDR SDRAM - 256Mb
|
Hynix Semiconductor
|
