| PART |
Description |
Maker |
| DT72V3654L10PF DT72V3654L15PF DT72V3664L10PF DT72V |
3.3 VOLT CMOS SyncBiFIFOTM WITH BUS-MATCHING 2/048 x 36 x 2 4/096 x 36 x 2 8/192 x 36 x 2
2K x 36 x 2 SyncBiFIFO, 3.3V
72V3674 SyncBiFIFO, 3.3V
|
IDT
|
| IDT723622 IDT723642 IDT723632L12PF IDT723632L12PF8 |
CMOS SyncBiFIFO?
512 x 36 x 2 SyncBiFIFO, 5.0V
256 x 36 x 2 SyncBiFIFO, 5.0V
1K x 36 x 2 SyncBiFIFO, 5.0V
|
IDT
|
| IDT72V36102L10PF IDT72V3682L15PF IDT72V36102L15PF |
3.3 VOLT CMOS SyncBiFIFO-TM 64K X 36 BI-DIRECTIONAL FIFO, 6.5 ns, PQFP120
3.3 VOLT CMOS SyncBiFIFO-TM 16K X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120
3.3 VOLT CMOS SyncBiFIFO-TM 64K X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120
|
Integrated Device Technology, Inc.
|
| IDT72V3692L15PF IDT72V36102 IDT72V36102L10PF IDT72 |
3.3 VOLT CMOS SyncBiFIFO-TM
|
IDT[Integrated Device Technology]
|
| IDT72V3652 IDT72V3672 |
3.3 VOLT CMOS SyncBiFIFO?
|
IDT
|
| IDT72V3612L20PQF |
3.3 VOLT CMOS SyncBiFIFO-TM 64 x 36 x 2
|
http://
|
| 74LCX646 74LCX646RM13TR 74LCX64604 |
LOW VOLT. CMOS OCTAL BUS TRANSCEIVER/REGISTER WITH 5 VOLT TOLERANT INPUTS AND OUTPUTS(3-STATE)
|
STMicroelectronics
|
| S29CD032G S29CD032G0JFAI000 S29CD032G0JFAI002 S29C |
CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY
From old datasheet system
4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
|
SPANSION[SPANSION]
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29LV004B AM29LV004BT-90FIB AM29LV004BB-120EC AM2 |
4 megabit CMOS 3.0 volt-only, boot sector flash memory
4 Megabit (512 K x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 4兆位12亩8位）的CMOS 3.0伏，只引导扇区闪
KC series Rotary switches have a no stop option and up to 12 positions and 4 poles
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
http://
|
