| PART |
Description |
Maker |
| 29F016-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
| MX29F016TI-90 MX29F016TI-12 29F016-12 29F016-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
http://
Macronix International
|
| PD42S17405L |
16M- bit CMOS dynamic RAMs(16M CMOS 动态RAM) 1,600位CMOS动态存储器,600的CMOS动态内存）
|
NEC, Corp.
|
| MX29LV065XBI-90 MX29LV065 MX29LV065TC-12 MX29LV065 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168
16M x 64 Bit DRAM Module unbuffered
16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 29LV160C-55R 29LV160C-70 29LV160C-90 MX29LV160CTMI |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
|
| MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
| HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| UPD4616112F9-B85LX-BC2 UPD4616112F9-B95LX-BC2 UPD4 |
16M-BIT CMOS MOBILE SPECIFIED RAM 1M-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
|
| MX29LV040CTC-12 MX29LV040CTC-12G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
| UPD4218160G5-60-7JF |
CMOS 16M-Bit DRAM
|
ETC
|
