| PART |
Description |
Maker |
| BA782S-GS08 |
PIN SWIT 35V 2PIN SOD-323 - Tape and Reel
|
Vishay Semiconductors
|
| STH7NA90FI STW7NA90FI STW7NA90 5599 |
-频道900V - 1.05ohm - 7A TO-247/ISOWATT218 FAST的功率MOSFET
N沟道900V -1.05Ω- 7A条，TO-247/ISOWATT218快速功率MOSFET（不适用沟道快速功率MOSFET的）
From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 900V - 1.05OHM - 7A - TO-247/ISOWATT218 FAST POWER MOSFET
N - CHANNEL 900V - 1.05 Ohm - 7A - TO-247/ISOWATT218 FAST POWER MOSFET
|
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| SF30AG-T SF30AG-B SF30DG-B SF30DG-T SF30JG-B SF30A |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers
3.0A SUPER-FAST GLASS PASSIVATED RECTIFIER
|
DIODES[Diodes Incorporated]
|
| STU6NA100 6003 |
N - CHANNEL 1000V - 1.45ohm - 6A - Max220 FAST POWER MOS TRANSISTOR
From old datasheet system
N - CHANNEL 1000V - 1.45 - 6A - Max220 FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGW39NC60VD GW39NC60VD |
N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESH IGBT
N-CHANNEL 40A - 600V - TO-247 Very Fast PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB3NA80 STB3NA80-1 |
3.1 A, 800 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
|
STMICROELECTRONICS
ST Microelectronics
|
| STB12NK80Z STB12NK80ZT4 STP12NK80Z |
N-CHANNEL 800V 0.65 OHM 10.5A TO-220/D2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
N-CHANNEL MOSFET with FAST DIODE
|
ST Microelectronics
|
| STGD10NC60H GD10NC60H |
N-channel 10A - 600V - DPAK Very fast PowerMESH?/a> IGBT
N-channel 10A - 600V - DPAK Very fast PowerMESH⑩ IGBT
N-channel 10A - 600V - DPAK Very fast PowerMESH IGBT
|
STMicroelectronics
|
| SI9804DY |
20-V (D-S) Single
N-Channel Reduced Qg, Fast Switching MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
| ISL54060IRUZ-T ISL54060IRTZ-T ISL54061 ISL54061IRT |
Negative Signal Swing, Sub-ohm, Dual SPST Single Supply Swit
1.8V to 6.5V, Sub-ohm, Dual SPST Analog Switch with Negative Signal Capability; Temperature Range: -40°C to 85°C; Package: 10-TDFN DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO10
Negative Signal Swing, Sub-ohm, Dual SPST Single Supply Switch
1.8V to 6.5V, Sub-ohm, Dual SPST Analog Switch with Negative Signal Capability; Temperature Range: -40°C to 85°C; Package: 10-uTQFN T&R DUAL 1-CHANNEL, SGL POLE SGL THROW SWITCH, PQCC10
|
Intersil Corporation
Intersil, Corp.
|
| STB6NA60 4232 STB6NA60-1 |
82V, 1.5KW TRANZORB, 1.5 KE82A, IN6293A
N-CHANNEL Power MOSFET
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STH9NA80 STH9NA80FI STW9NA80 |
N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
N-Channel 800V-0.85Ω-9.1A - TO-247/ISOWATT218 Fast Power MOS Transistor(Ｎ沟道快速功率ＭＯＳ晶体
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
