| PART |
Description |
Maker |
| IRLU014NPBF IRLR014NPBF |
HEXFET POWER MOSFET ( VDSS = 55V , RDS(on) = 0.14, ID = 10A ) HEXFET功率MOSFET(减振钢板基本\u003d 55V的,的RDS(on)\u003d 0.14ヘ,身份证\u003d 10A条)
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International Rectifier, Corp.
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| IRG4RC10SD IRG4RC10SDTR IRG4RC10SDTRL IRG4RC10SDTR |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) 绝缘栅双极型晶体管,超快软恢复二极管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.10V,@和VGE \u003d 15V的,集成电路\u003d 2.0安培 600V DC-1 kHz (Standard) Copack IGBT in a D-Pak package
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International Rectifier, Corp. IRF[International Rectifier]
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| IRLI620G IRLI620 |
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=4.0A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.80ohm,身份证\u003d 4.0a上)
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International Rectifier, Corp. IRF[International Rectifier]
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| IRFN450 |
POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.415ohm, Id=12A) 功率MOSFET N沟道BVdss \u003d 500V及的Rds(on)\u003d 0.415ohm,身份证\u003d 12A条)
|
International Rectifier, Corp. IRF[International Rectifier]
|
| IRFPS40N50L |
Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)典\u003d 0.087ohm,身份证\u003d 46A条)
|
International Rectifier, Corp. IRF[International Rectifier]
|
| IRFP150N IRFP150 |
Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rdson)\u003d 0.035W,身份证\u003d 42A条)
|
International Rectifier, Corp. IRF[International Rectifier]
|
| IRG4BC30U-S |
INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT(Vces=600V, Vce(on)typ. = 1.95V, @Vge=15V, Ic=12A) 绝缘栅双极晶体管IGBT的速度超快速(VCES和\u003d 600V电压的Vce(on)的典型。\u003d 1.95V,@和VGE \u003d 15V的,集成电路\u003d 12A条) 600V UltraFast 8-60 kHz Discrete IGBT in a D2-Pak package
|
International Rectifier, Corp.
|
| IRFB4710 |
Power MOSFET(Vdss=100v, Rds(on)max=0.014ohm, Id=75A) 功率MOSFET(减振钢板基本\u003d 100伏时,RDS(on)的最大值\u003d 0.014ohm,身份证\u003d 75A条)
|
International Rectifier, Corp.
|
| JANTXV2N6851 JANTX2N6851 |
POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A) 功率MOSFET P沟道(BVdss \u003d-00V,的Rds(on)\u003d 0.80ohm,身份证\u003d- 4.0a上)
|
International Rectifier, Corp. IRF[International Rectifier]
|
| IRF7451 |
Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 150伏时,RDS(on)的最大值\u003d 0.09ohm,身份证\u003d 3.6A
|
International Rectifier, Corp.
|
| IRG4BC15UD-L IRG4BC15UD-S |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A) 绝缘栅双极型晶体管,超快软恢复二极管VCES和\u003d 600V电压的Vce(on)典\u003d 2.02V,@和VGE \u003d 15V的,集成电路\u003d 7.8A 600V UltraFast 10-30 kHz Copack IGBT in a TO-262 package 600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak package
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International Rectifier, Corp. IRF[International Rectifier]
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| IRFP450 IRFP450PBF |
500V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=500V, Rds(on)=0.40ohm, Id=14A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)\u003d 0.40ohm,身份证\u003d 14A条)
|
International Rectifier, Corp.
|