| PART |
Description |
Maker |
| HFR15A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR8L06 |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR10A06F |
Glass Passivated HyperFast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| HFR15A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| HFR30A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| HFR30A12D |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| HFR12A06 |
Glass Passivated HyperFast Recovery Rectifier
|
YENYO TECHNOLOGY
|
| HFR8A12DF |
Glass Passivated Hyperfast Recovery Rectifier
|
YENYO TECHNOLOGY Co., Ltd
|
| 1.5KE350 1.5KE7.5 1.5KE100 1.5KE400 1N6300 15KE 1. |
160 V, 1500 W, glass passivated junction transient voltage suppressor
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR 玻璃钝化结瞬态电压抑制器
16-Bit Dual-Supply Bus Transceiver with Configurable Voltage Translation and 3-State Outputs 48-TSSOP -40 to 85
220 V, 1 mA, glass passivated junction transient voltage suppressor
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
|
TRANSYS Electronics Limited
Transys Electronics, Ltd.
Transys Electronics Ltd.
TRSYS
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|
| 1N4003G-A 1N4003G-B 1N4001G-A 1N4001G-B 1N4002G-B |
1.0A GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Anderson Power Products, Inc.
Diodes, Inc.
|
| 1R5GU41 |
Ultra Fast Recovery Pack: DO-15
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE拢潞400V CURRENT拢潞1.5A
ULTRAFAST EFFICIENT GLASS PASSIVATED RECTIFIER VOLTAGE?00V CURRENT?.5A
|
Gulf Semiconductor
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
