PART |
Description |
Maker |
ER3400 ER3400IR ER3400HR |
4096 Bit Electrically Alterable Read Only Memory From old datasheet system 4096 Bit Electrically Alterable ROM
|
List of Unclassifed Manufacturers ETC[ETC] General Semiconductor
|
BR24L04FJ-W BR24L04FVM-W BR24L04FV-W BR24L04F-W BR |
512】8 bit electrically erasable PROM 5128 bit electrically erasable PROM
|
ROHM[Rohm]
|
24LC32AX 24AA32A 24LC32AT-I_SM 24LC32AT-I_SMG 24LC |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I<SUP>2</SUP>C compatible 2-wire serial ... The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r 32K I2C Serial EEPROM The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial ... 32KIC Serial EEPROM 32K 1.8V I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
IS25C64A-3ZLA1 IS25C32A IS25C32A_07 IS25C32A-2GI I |
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI[Integrated Silicon Solution, Inc]
|
M6M80041 M6M80041FP M6M80041P |
4096-BIT (256-WORD BY-180 -BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
ISPLSI2128A-100LQ160 ISPLSI2128A-80LT176 ISPLSI212 |
Electrically-Erasable Complex PLD Electrically-ErasableComplexPLD
|
|
24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM From old datasheet system CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
|
28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
BR24L64-W BR24L64-W1 |
8k?8 bit electrically erasable PROM 8k×8 bit electrically erasable PROM
|
Rohm
|
25AA080-I_P 25AA08004 25AA080-I_SN 25LC080-I_SN 25 |
The 25LC080 is a 8K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) ... The 25C080 is a 8K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) ... The 25AA080 is a 8K-bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) ... 8K SPI TM Bus Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
BR24L08-W07 BR24L08F-W BR24L08FJ-W BR24L08FV-W BR2 |
1024】8 bit electrically erasable PROM
|
Rohm
|