| PART |
Description |
Maker |
| LN172 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| LN189M |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| LNA4801L |
GaAlAs Infrared Light Emitting Diode
|
PANASONIC[Panasonic Semiconductor]
|
| OLD232-2 |
GaAlAs Infrared Light Emitting Diode(砷化稼红外线发光二极
|
OKI SEMICONDUCTOR CO., LTD.
|
| LN66LLN66L LN66L |
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes
LN66L (LN66(L)) - GaAs Infrared Light Emitting Diode
|
Panasonic
|
| MIE-554H4 554H4 |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE 发动器的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| TSMF3700 |
GaAlAs/GaAlAs Infrared Emitting Diode in SMT Package
|
Vishay Siliconix
|
| Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| VTE7173 VTE7172 |
GaAlAs Infrared Emitting Diodes
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| VTE1295 |
GaAlAs Infrared Emitting Diodes
|
PERKINELMER[PerkinElmer Optoelectronics]
|
| HE8812SG |
GaAlAs Infrared Emitting Diode
|
HITACHI[Hitachi Semiconductor]
|
| HE8811_06 |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
