PART |
Description |
Maker |
ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760; TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 15A条(c)的|园区 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五(巴西)总裁| 300mA的一(c)|
|
NXP Semiconductors N.V.
|
2N3723 2N2787 2N706B/46 2N3409 2N5188 2N3728 |
30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-78 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-39 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-46 TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
|
SEMICOA CORP
|
FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89 TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五(巴西)总裁|甲一(c)| TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 1A条一(c)|采用SOT - 89 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1A条一(c)| TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五(巴西)总裁| 400mA的一(c)| TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC Fujitsu, Ltd. Bourns, Inc. Amphenol, Corp.
|
BCX29 BF299 BF298 BFR58 BC312 MH7301 BF294 BC533 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-92 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 100MA I(C) | TO-39 MAX 3000A CPLD 512 MC 208-PQFP 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一c)| TO - 220AB现有 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-39 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一(c)| TO - 39封装 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | TO-92
|
TE Connectivity, Ltd.
|
NEL230397 NEM2708B20 NEM2310B20 NEM1725B20 NEL2301 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | STX-M3 TRANSISTOR | BJT | NPN | 3.6A I(C) | RFMOD TRANSISTOR | BJT | NPN | 7.2A I(C) | RFMOD 晶体管|晶体管|叩| 7.2AI(丙)| RFMOD TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 600MA I(C) | STX-M3 晶体管|晶体管|叩| 20V的五(巴西)总裁| 600毫安一(c)|希捷- M3 TRANSISTOR | BJT | NPN | 4.5A I(C) | FO-57CVAR 晶体管|晶体管|叩| 4.5AI(丙)|7CVAR
|
Abracon, Corp. Renesas Electronics, Corp.
|
2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92 SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五(巴西)总裁| 4A条一(c)|园区 TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五(巴西)总裁|甲一(c)|园区 TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd. Atmel, Corp. HIROSE ELECTRIC Co., Ltd.
|
CM25-28 C25-28 CM10-28 C3-28 B12-28 C2M70-28R C2M1 |
TRANSISTOR | BJT | NPN | 3A I(C) | SOT-119VAR 2048-bit EEPROM tag IC at 13.56 MHz, with 64-bit UID and Password, ISO15693 and ISO18000-3 Mode 1 compliant TRANSISTOR | BJT | NPN | 33V V(BR)CEO | 2.5A I(C) | STX-8 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR | BJT | NPN | 24V V(BR)CEO | 200MA I(C) | STX-6 TRANSISTOR | BJT | NPN | 1A I(C) | STX-8 晶体管|晶体管|叩| 1A条一(c)|希捷- 8 Ultrafast recovery diode 晶体管|晶体管|叩| RFMOD HIGH EFFICIENCY ULTRAFAST DIODE 晶体管|晶体管|叩| 12A条一(c)|的SOT - 119VAR
|
Kingbright, Corp.
|
NE32740A NE32708 NE32740B NE32702 NE32700 |
TRANSISTOR | BJT | NPN | 50MA I(C) | MACRO-X TRANSISTOR | BJT | NPN | 50MA I(C) | MICRO-X TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 50MA I(C) | CHIP 晶体管|晶体管|叩| 12V的五(巴西)总裁| 50mA的一(c)|芯片
|
Panasonic, Corp.
|
ECG12 ECG25 ECG18 ECG19 ECG14 ECG31 ECG32 ECG26 EC |
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 5A I(C) | TO-92 TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.2A I(C) | TO-237 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 700MA I(C) | SIP TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 700MA I(C) | SIP TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1A I(C) | TO-92VAR TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1A I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 2.5A I(C) | SIP
|
|
ZTX649DA ZTX649DB ZTX649DC ZTX749DA |
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | CHIP Transient Voltage Suppressor Diodes 晶体管|晶体管|进步党| 25V的五(巴西)总裁|芯片 TRANSISTOR|BJT|NPN|25VV(BR)CEO|CHIP
TRANSISTOR|BJT|NPN|45VV(BR)CEO|CHIP
|
Fairchild Semiconductor, Corp.
|
RCA1B04 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7A I(C) | TO-3 晶体管|晶体管| npn型| 200伏五(巴西)总裁| 7A条一(c)|
|
Fairchild Semiconductor, Corp.
|