| PART |
Description |
Maker |
| TGF4260-EPU |
9.6mm Discrete HFET C BAND, Si, RF SMALL SIGNAL, HFET
|
TriQuint Semiconductor, Inc.
|
| HFET2MI |
0.5-μm HFET 2MI
0.5-レm HFET 2MI
|
TriQuint Semiconductor
|
| TGF4118-EPU TGF4118 |
18 mm Discrete HFET
|
TriQuint Semiconductor,Inc.
TRIQUINT[TriQuint Semiconductor]
|
| TGF4260-SCC |
9.6 mm Discrete HFET
|
TriQuint Semiconductor,Inc.
|
| TGF4260 TGF4260-EPU |
9.6mm Discrete HFET
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2961-SD |
1 Watt DC-4 GHz Packaged HFET
|
TriQuint Semiconductor
|
| NE3508M04-T2B-A |
S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET LEAD FREE, THIN, SUPER MINIMOLD PACKAGE-4
|
California Eastern Laboratories, Inc.
|
| CGD942C |
Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. CGD942C<SOT115J|<<<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
