| PART |
Description |
Maker |
| RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H5N2005DL-15 |
200V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SK3053 2SK3053JM |
Nch power MOS FET MP-45F high-current switching
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SK2054 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS Field Effect Transistor
|
NEC[NEC]
|
| APT20M40BVR |
POWER MOS V 200V 59A 0.040 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| 2SK679 2SK679A 2SK679A-T 2SK679A-T/JD 2SK679A-T/JM |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
MOS type field effect transistor
|
NEC[NEC]
Toshiba Semiconductor
|
| NP34N055IHE NP34N055HHE NP34N055HHE-AZ |
Nch MOS FET for High-speed switching
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
34 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 MP-3, 3 PIN
|
NEC[NEC]
Cypress Semiconductor, Corp.
|
| APT20M22JVR APT20M22 |
From old datasheet system
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 97A 0.022 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 2SK2090 D11228EJ1V0DS00 |
N-Channel MOS FET FOR HIGH-SPEED SWITCHING
From old datasheet system
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK2112 D11232EJ2V0DS00 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
From old datasheet system
MOS Field Effect Transistor
|
NEC[NEC]
|
| 2SK2109 D11229EJ2V0DS00 |
N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
From old datasheet system
MOS Field Effect Transistor
|
NEC[NEC]
|
