| PART |
Description |
Maker |
| 2N8768 |
N-Channel Power MOSFETs 30 A,150 V/200 V
|
New Jersey Semi-Conductor Products, Inc.
|
| SPD4948SM SPD4942SM SPD4943SM SPD4944SM SPD4945SM |
1 AMPS 200-1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| IRF9643-001PBF IRF9643-003PBF IRF9643-005PBF IRF96 |
9 A, 150 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET
8.7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
1.75 A, 150 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET
27 A, 100 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 150 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET
2.5 A, 100 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET
3.5 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
11 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
VISHAY INTERTECHNOLOGY INC
|
| APT30D20SG APT30D20B APT30D20B_05 APT30D20BG APT30 |
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Advanced Power Technolo...
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| TDM15002D |
150 A, 200 V, SILICON, RECTIFIER DIODE
|
MICROSEMI CORP-SCOTTSDALE
|
| SP0610LE-6288 BSS129E-6325 BSS149E-6288 |
180 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
150 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
350 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
|
SIEMENS AG
INFINEON TECHNOLOGIES AG
|
| IMT200-150-10 IMT200-150-12 |
Input voltage 100-150-200 VDC;output voltage 10 VDC;output current:20 mA; 200-480 W full brick DC to DC converter
Input voltage 100-150-200 VDC;output voltage 12 VDC;output current:17 mA; 200-480 W full brick DC to DC converter
|
FranMar International
|
| PHX18NQ20T PHX18NQ20T-01 PHX18NQ20T127 |
From old datasheet system
8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, TO-220F, 3 PIN
N-channel enhancement mode field-effect transistor 8.2 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| IMISM562BZT |
200 MHz, OTHER CLOCK GENERATOR, PDSO8 0.150 INCH, SOIC-8
|
Cypress Semiconductor, Corp.
|
| 150KSR200M 152KR300AMPBF |
150 A, 200 V, SILICON, RECTIFIER DIODE
150 A, 300 V, SILICON, RECTIFIER DIODE, DO-205AA
|
|
| IRFZ30-005 IRFZ22-012 IRFZ25-012 IRF733-005PBF IRF |
30 A, 50 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
14 A, 50 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
16 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
4.5 A, 350 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
9.2 A, 80 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 80 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
2.6 A, 200 V, 2.4 ohm, N-CHANNEL, Si, POWER, MOSFET
50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
3.3 A, 150 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
5.6 A, 80 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET
30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET
13 A, 250 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
4.4 A, 250 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Bourns, Inc.
Molex, Inc.
VISHAY INTERTECHNOLOGY INC
|
| APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET
Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
|
