| PART |
Description |
Maker |
| MGSF2N02E MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 |
2.8 Amps, 20 Volts, N−Channel SOT−23 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB
2.8 Amps, 20 Volts, N-Channel SOT-23
2.8 Amps, 20 Volts, N−Channel SOT−23
Power MOSFET 2.8 Amps, 20 Volts
|
ONSEMI[ON Semiconductor]
|
| MGB19N35CL MGP19N35CL |
Ignition IGBT 19 Amps, 350 Volts(19A50V钳位电压，点火绝缘栅双极型晶体管（D2PAK封装 点火IGBT一十九安培50伏特，（9A50V钳位电压，点火绝缘栅双极型晶体管（采用D2PAK封装））
Ignition IGBT 19 Amps, 350 Volts(19A350V钳位电压，点火绝缘栅双极型晶体管（TO-220封装 19 A, 380 V, N-CHANNEL IGBT, TO-220AB
Ignition IGBT 19 Amps, 350 Volts(19A锛?50V?充??靛?锛?????缂????????浣??锛?O-220灏??锛?
|
ON Semiconductor
|
| NTD24N06L NTD24N06L-1 NTD24N06L-1G NTD24N06LG NTD2 |
Power MOSFET 24 Amps, 60 Volts, Logic Level N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 24 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 24Amps, 60Volts Logic Level N-Channel DPAK(24A, 60 V，逻辑电平，N通道，DPAK封装的功率MOSFET)
Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
|
ON Semiconductor
|
| NTTD2P02R2-D NTTD2P02R2/D |
Power MOSFET -2.4 Amps-20 Volts
Power MOSFET -2.4 Amps, -20 Volts Dual P-Channel Micro8
|
ON Semiconductor
|
| MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247
Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
| NTD4302 NTD4302T4 NTD4302-1 |
Power MOSFET 68 Amps / 30 Volts(N-Channel DPAK)
Power MOSFET 68 Amps, 30 Volts(N−Channel DPAK)
Power MOSFET 68 Amps, 30 Volts(N-Channel DPAK)
|
ONSEMI[ON Semiconductor]
|
| 1N70-T92-B 1N70-T92-K 1N70L-T92-B 1N70L-T92-K |
1.2 Amps, 700 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
| 12N70L-TF1-T 12N70G-TF1-T 12N70G-TA3-T 12N70G-TF3- |
12 Amps, 700 Volts N-CHANNEL MOSFET
|
Unisonic Technologies
|
| MMSF3300-D |
Power MOSFET 11.5 Amps, 30 Volts N-Channel SO-8
|
ON Semiconductor
|
| MMSF4P01HD-D |
Power MOSFET 4 Amps, 12 Volts P-Channel SO-8
|
ON Semiconductor
|
|
