PART |
Description |
Maker |
79LV0408XPFK-20 79LV0408XPFI-20 79LV0408XPFH-20 79 |
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 250 ns, PDFP40 Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 200 ns, PDFP40 IC LOGIC 3245 OCTAL FET BUS SWITCH -40 85C QSOP-20 55/TUBE 512K X 8 EEPROM 3V, 250 ns, PDFP40
|
Maxwell Technologies, Inc
|
C0408RTFI-12 |
512K X 8 EEPROM 5V MODULE, 120 ns, DMA40
|
MAXWELL TECHNOLOGIES
|
AS8E512K8CW-200_HQ AS8E512K8CW-300_HQ AS8E512K8 AS |
512K x 8 EEPROM EEPROM Module
|
AUSTIN[Austin Semiconductor]
|
CY7C1366B-200BGI CY7C1366B-200BGC CY7C1366B-225BGI |
Low Cost, 300 MHz Rail-to-Rail Amplifier (Single); Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 512K X 18 CACHE SRAM, 3.5 ns, PQFP100 CONNECTOR ACCESSORY 512K X 18 CACHE SRAM, 3 ns, PQFP100 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 512K X 18 CACHE SRAM, 2.8 ns, PBGA119 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 256K X 36 CACHE SRAM, 2.8 ns, PBGA165 9-Mb (256K x 36/512K x 18) Pipelined DCD Sync SRAM 9 - MB的(256 × 36/512K × 18)流水线双氰胺同步静态存储器
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp.
|
AS29F040 AS29F040-120LC AS29F040-150LC AS29F040-15 |
5V 512K x 8 CMOS flash EEPROM, access time 70ns 5V 512K x 8 CMOS flash EEPROM, access time 55ns 5V 512K x 8 CMOS flash EEPROM, access time 90ns
|
ALSC[Alliance Semiconductor Corporation]
|
AS8S512K32AP-45/IT AS8S512K32Q-45LIT AS8S512K32P-4 |
512K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PGA66 512K x 32 SRAM memory array
|
AUSTIN SEMICONDUCTOR INC
|
DS1350YL-70-IND DS1350YL-70IND DS1350YL-100IND |
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDSO34 LOW PROFILE, SMT-34 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DFP34 512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DFP34 512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDSO34 LOW PROFILE, SMT-34
|
Maxim Integrated Products, Inc.
|
CY3LV512-10JI CY3LV010 CY3LV010-10JC CY3LV010-10JI |
1M CPDL boot EEPROM. 512K CPDL boot EEPROM. 512K / 1 Mbit CPLD Boot EEPROM
|
CYPRESS[Cypress Semiconductor]
|
MCM32512S10 MCM32L512S10 MCM32512 MCM32512S70 MCM3 |
512K x 32 Bit Dynamic Random Access Memory Module 512K X 32 FAST PAGE DRAM MODULE, 80 ns, SMA72 512K x 32 Bit Dynamic Random Access Memory Module 512K X 32 FAST PAGE DRAM MODULE, 70 ns, SMA72
|
MOTOROLA[Motorola, Inc] Panasonic, Corp. Motorola Mobility Holdings, Inc.
|
IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
DS1650YLPM-70-IND DS1650YLPM-100IND DS1650YLPM-70I |
512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDFP34 512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DFP34 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DFP34
|
Maxim Integrated Products, Inc.
|
24LC512T-I_MF 24LC512T-I_P 24LC512T-I_SM 24FC512T- |
512K I2C垄芒 CMOS Serial EEPROM 512K I2C?CMOS Serial EEPROM
|
Microchip Technology
|