| PART |
Description |
Maker |
| PBRN123E |
NPN 800 mA 40 V BISS RETs
|
NXP Semiconductors
|
| PBSS4021NT |
20 V, 4.3 A NPN low VCEsat (BISS) transistor
20 V, 4.3 A NPN low V_CEsat (BISS) transistor 4300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| PBSS4041SPN |
60 V NPN/PNP low V_CEsat (BISS) transistor
60 V NPN/PNP low VCEsat (BISS) transistor
60 V NPN-PNP low V_CEsat (BISS) transistor 6700 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBRP123ET |
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kOhm, R2 = 2.2 kOhm
PNP 800 mA, 40 V BISS RET; R1 = 2.2 kW, R2 = 2.2 kW
|
NXP Semiconductors
|
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| PBSS2540M |
40 V, 0.5 A NPN low VCEsat (BISS) transistor
40 V, 0.5 A NPN low VCEsat (BISS) transistor 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4160PANP |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS4112PANP |
NPN/NPN low VCEsat (BISS) transistor
|
NXP
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| FJP5027R FJP5027RTU FJP5027OTU |
3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB TO-220, 3 PIN
NPN Silicon Transistor; Package: TO-220; No of Pins: 3; Container: Rail 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| PBSS4120T-15 |
NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBSS4630PA |
30 V, 6 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
|
