| PART |
Description |
Maker |
| PBRN113E |
NPN 800 mA 40 V BISS RETs
|
NXP Semiconductors
|
| PBSS2540M PBSS2540M315 |
40 V, 0.5 A NPN low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| PBSS4021NT |
20 V, 4.3 A NPN low VCEsat (BISS) transistor
20 V, 4.3 A NPN low V_CEsat (BISS) transistor 4300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
NXP Semiconductors N.V.
|
| PBSS4041SPN |
60 V NPN/PNP low V_CEsat (BISS) transistor
60 V NPN/PNP low VCEsat (BISS) transistor
60 V NPN-PNP low V_CEsat (BISS) transistor 6700 mA, 60 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4580PA PBSS4580PA-15 |
80 V, 5.6 A NPN low V_CEsat (BISS) transistor 5600 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
80 V, 5.6 A NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| MJ16018 MJW16018 ON1986 |
Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247AE
|
MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
|
| PBSS2540M |
40 V, 0.5 A NPN low VCEsat (BISS) transistor
40 V, 0.5 A NPN low VCEsat (BISS) transistor 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4350SS115 |
50 V, 2.7 A NPN/NPN low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS4032SN |
30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBHV8118T |
180 V, 1 A NPN high-voltage low V_CEsat (BISS) transistor
180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
|
|
