| PART |
Description |
Maker |
| RJK60S1DPD-00J2 |
600V - 8A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6034DPP-E0T2 RJK6034DPP-E0-15 |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6025DPH-E0 RJK6025DPH-E0T2 |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6036DP3-A0 RJK6036DP3-A0J2 RJK6036DP3-A0-15 |
600V - 2A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S4DPP-E0 RJK60S4DPP-E0-T2 |
600V - 16A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6014DPP-E0 |
600V - 16A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STP11NM60A STP11NM60AFP STB11NM60A-1 |
11 A, 600 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh⑩Power MOSFET
N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.4ohm - 11A TO-220/TO-220FP/I2PAK MDmesh?Power MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| APT1001RBVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 1000V 11A 1.000 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
