PART |
Description |
Maker |
MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor Toshiba Corporation
|
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|
MG400Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
RJH60F6DPK RJH60F6DPK-00-T0 |
85 A, 600 V, N-CHANNEL IGBT Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
GT15Q301 |
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体
|
http:// TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
MG150J7KS60 |
GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA GTR MODULE SILICON N CHANNEL IGBT
|
Toshiba Semiconductor
|
MG400V2YS60A |
IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
|
TOSHIBA
|
MIG50J101H |
Intelligent Power Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA Intelligent Power Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
GT5G102 GT5G1022-7B5C |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS 5 A, 400 V, N-CHANNEL IGBT
|
Toshiba Semiconductor
|
2SH26 |
Silicon N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|