| PART |
Description |
Maker |
| OM9403SD |
25V 8A Single Channel Hi-Rel IGBT Gate Driver in a DP-10A package
IGBT GATE DRIVER For Driving IGBT Modules 600V and 1200V, 150A to 600A
|
IRF[International Rectifier]
|
| CM400DU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM150TU-12F |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM400DY-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| CM600HU-12H |
IGBT Modules: 600V
|
Mitsubishi Electric Corporation
|
| VIO130-06P1 VII130-06P1 VDI130-06P1 VID130-06P1 IX |
IGBT Modules
From old datasheet system
IGBT Modules: Buck Configurated IGBT Modules
IGBT Modules: Boost Configurated IGBT Modules
|
IXYS[IXYS Corporation]
|
| PSDM-0DO2-5040 PSDM-0DT2-5020 |
600V IGBT/MOSFET Driver modules with integrated DC/DC converter
|
Schurter Inc.
|
| CM200DY-12H |
IGBT Modules: 600V
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| CM150E3U-12H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
IGBT Modules: 600V
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| CM200E3U-12H |
HIGH POWER SWITCHING USE INSULATED TYPE 大功率开关使用绝缘型
IGBT Modules: 600V
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| SGB04N60 SGU04N60 SGD04N60 SGP04N60 |
IGBTs & DuoPacks - 4A 600V TO 220AB IGBT
IGBTs & DuoPacks - 4A 600V TO252AA SMD IGBT
IGBTs & DuoPacks - 4A 600V TO263AB SMD IGBT
Fast IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
