| PART |
Description |
Maker |
| BUZ22SMD BUZ22E3045A BUZ22E3046 |
Power MOSFET, 100V,D²PAK , RDSon=0.055 Ohm, 34A, NL
Low Voltage MOSFETs - Power MOSFET, 100V,DPAK , RDSon=0.055 Ohm, 34A, NL
N-Channel SIPMOS Power Transistor
|
Infineon
|
| 1DI240A-055 |
(1DI240A-055 / 1DI480A-055) BIPOLAR TRANSISTOR MODULES Rating and Specifications
|
Fuji Semiconductors
|
| SFF50N20NP SFF50N20N |
50 AMPS 200 VOLTS 0.055 OHM N-Channel POWER MOSFET
|
SSDI[Solid States Devices, Inc]
|
| FQA33N10L |
100V LOGIC N-Channel MOSFET 36 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| FDD5612NL |
60V N-Channel PowerTrench MOSFET 18 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
Fairchild Semiconductor, Corp.
|
| BUZ11S2-E3045 BUZ11-E3044 BUZ11S2-E3044 BUZ11-E304 |
30 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
30 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET TO-220AB, 3 PIN
30 A, 50 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
30 A, 50 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET TO-220AB, 3 PIN
30 A, 50 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
30 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
26 A, 50 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET TO-220AB, 3 PIN
26 A, 50 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 3 PIN
26 A, 50 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220AB, 4 PIN
|
SIEMENS AG
Infineon Technologies AG
|
| S29GL064M90FBIR00 S29GL064M90FCIR02 S29GL064M90FCI |
MOSFET, Switching; VDSS (V): 300; ID (A): 88; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.042; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5000; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 90; RDS (ON) typ. (ohm) @10V: 0.0046; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2500; toff (µs) typ: 0.07; Package: TO-220AB
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (S)- (2)
MOSFET, Switching; VDSS (V): 60; ID (A): 70; Pch : 80; RDS (ON) typ. (ohm) @10V: 0.006; RDS (ON) typ. (ohm) @4V[4.5V]: [0.008]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 6200; toff (µs) typ: 0.125; Package: LDPAK (L)
MOSFET, Switching; VDSS (V): 150; ID (A): 70; Pch : -; RDS (ON) typ. (ohm) @10V: 0.022; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5100; toff (µs) typ: -; Package: TO-3P
MOSFET, Switching; VDSS (V): 200; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.036; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 200; ID (A): 96; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4900; toff (µs) typ: 0.22; Package: TO-3P
MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
MOSFET, Switching; VDSS (V): 230; ID (A): 35; Pch : -; RDS (ON) typ. (ohm) @10V: 0.03; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5200; toff (µs) typ: -; Package: TO-3PFM
MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 3.0伏只页面模式闪存具有0.23微米工艺技术的MirrorBit
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 16M X 16 FLASH 3V PROM, 100 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology 8M X 8 FLASH 3V PROM, 90 ns, PBGA63
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (L)
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| LP25-122-KT151W LP12-112-KT151W LP12-163-KT151W LP |
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1200 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1100 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 16000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 5100 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1600 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 150 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 390 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 30 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 33 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.6 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 2.4 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 3.3 ohm, THROUGH HOLE MOUNT
RTD TEMP SENSOR-PLATINUM
RESISTOR, TEMPERATURE DEPENDENT, PTC, 75 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 20 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 24 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 82 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 68 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 6800 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 180 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 18000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1800 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 820 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 680 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 22 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 11 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 13 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 56 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 18 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 160 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 68000 ohm, THROUGH HOLE MOUNT
RESISTOR, TEMPERATURE DEPENDENT, PTC, 1.8 ohm, THROUGH HOLE MOUNT
|
RCD Components, Inc.
Golledge Electronics, Ltd.
RCD COMPONENTS INC
|
| TS53YL500OHM/-20TR TS53YL50OHM/-20TR TS53YL20OHM/- |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 5000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 500000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 10000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 20000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 200 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 100 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 1000000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 2000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.2 W, 50000 ohm
|
Vishay Intertechnology, Inc.
|
| AT90SC4816RS |
AT90SC4816RS Summary [Updated 06/03. 2 Pages] Summary of the AT90SC4816RS giving the key features. a brief description and a block diagram.
Low-power, high-performance, 8-/16-bit secure microcontroller with 48K Byte ROM and 16K Byte EEPROM. Security Features: MMU, MED, OTP (One Time Programmable) EEPROM area, RNG (random Number Generator), "out of bounds" detectors, side chann
|
Atmel
|
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