PART |
Description |
Maker |
IDT71V65602S-100BQI IDT71V65802S-100BQI IDT71V6580 |
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K × 3612K采样× 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 36 ZBT SRAM, 4.2 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 512K X 18 ZBT SRAM, 4.2 ns, PBGA119 3.3V 256K X 36 ZBT Synchronous 2.5V I/O PipeLined SRAM 3.3V 512K x 18 ZBT Synchronous 2.5V I/O PipeLined SRAM
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Integrated Device Techn... Integrated Device Technology, Inc. IDT
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CY7C1464AV33-167BGXI CY7C1464AV33-200BGXC CY7C1462 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.4 ns, PBGA209 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 512K X 72 ZBT SRAM, 3.2 ns, PBGA209 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBLArchitecture 2M X 18 ZBT SRAM, 2.6 ns, PBGA165 2M X 18 ZBT SRAM, 3.2 ns, PQFP100
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的(256 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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GS8322Z72C-225T GS8322Z72GC-225T GS8322Z18B-225IT |
512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209 512K X 72 ZBT SRAM, 7 ns, PBGA209 14 X 22 MM, 1 MM PITCH, ROHS COMPLIANT, BGA-209 2M X 18 ZBT SRAM, 7 ns, PBGA119
|
GSI Technology, Inc.
|
CY7C1356A-166AC CY7C1354A-133BGCT |
512K X 18 ZBT SRAM, 3.6 ns, PQFP100 256K X 36 ZBT SRAM, 4.2 ns, PBGA119
|
CYPRESS SEMICONDUCTOR CORP
|
K7N803601B K7N801801B K7N803601B-PI160 K7N801801B- |
256Kx36 & 512Kx18 Pipelined NtRAM 256K X 36 ZBT SRAM, 3.5 ns, PQFP100 512K X 18 ZBT SRAM, 3.5 ns, PQFP100
|
Samsung semiconductor
|
AS7C25512NTD32_36A AS7C25512NTD32A AS7C25512NTD32A |
NTD? Sync SRAM - 2.5V 2.5V 512K x 32/36 Pipelined SRAM with NTD 512K X 32 ZBT SRAM, 3.5 ns, PQFP100
|
Alliance Semiconductor Corp... ALSC Alliance Semiconductor Corporation Alliance Semiconductor, Corp.
|
MCM64Z916ZP100R MCM64Z834ZP100R |
512K X 18 ZBT SRAM, 5 ns, PBGA119 256K X 36 ZBT SRAM, 5 ns, PBGA119
|
MOTOROLA INC
|
GS8162Z72AC-225T GS8162Z72AGC-275T GS8162Z72AGC-22 |
256K X 72 ZBT SRAM, 6 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209 256K X 72 ZBT SRAM, 5.25 ns, PBGA209 14 X 22 MM, 1 MM PITCH, BGA-209 512K X 36 ZBT SRAM, 6 ns, PBGA119
|
GSI Technology, Inc.
|
CY7C1356C-166BZI CY7C1356C-166BZXI CY7C1356C-166BZ |
9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 512K X 18 ZBT SRAM, 3.2 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBLArchitecture 256K X 36 ZBT SRAM, 2.8 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
IS61NLP51236-133TQI |
512K X 36 ZBT SRAM, 4.2 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
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