| PART |
Description |
Maker |
| HMT325S6BFR6C-H9 |
256M X 64 DDR DRAM MODULE, DMA204
|
HYNIX SEMICONDUCTOR INC
|
| M391T5663FB3-CE7 |
256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
|
| M312L5720CZ0-CA2 |
256M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
|
| M392B5673GB0-CK0 M392B2873GB0-CK0 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
128M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
| M471B5673DZ1-CG8 M471B6474DZ1-CG8 |
256M X 64 DDR DRAM MODULE, DMA204
64M X 64 DDR DRAM MODULE, DMA204
|
|
| HMT125S6AFP6C-S5 HMT125S6AFP6C-S6 |
256M X 64 DDR DRAM MODULE, 20 ns, DMA204 LEAD FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
|
| MT46H256M32LGCM-5A MT46H256M32L4CM-6A MT46H256M32L |
256M X 32 DDR DRAM, 5 ns, PBGA90
128M X 32 DDR DRAM, 5 ns, PBGA168
|
|
| MT16HTF25664AIZ-80EHI MT16HTF25664AIZ-800XX |
256M X 64 DDR DRAM MODULE, DMA240 HALOGEN FREE, MO-237, UDIMM-240
|
Moeller Electric, Corp.
|
| HMT351V7BMR4C-G7 HMT351V7BMR4C-H9 HMT112V7BFR8C-G7 |
240pin DDR3 SDRAM VLP Registered DIMM
256M X 72 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
| K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66
0603 18 OHM 1/16W
RESISTOR, 1K, 1%, SMT 0603
1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| HY5DU561622CT-D4 HY5DU56822CT-D4 HY5DU56822CT-D43 |
256M-P DDR SDRAM 32M X 8 DDR DRAM, 0.65 ns, PDSO66
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
