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SIF912EDZ-T1-GE3 - 7.4 A, 30 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 5 X 2 MM, ROHS COMPLIANT, POWERPAK-6

SIF912EDZ-T1-GE3_3767117.PDF Datasheet

Part No.

SIF912EDZ-T1-GE3

Description

7.4 A, 30 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 5 X 2 MM, ROHS COMPLIANT, POWERPAK-6

File Size

102.31K / 6 Page

Maker

Vishay Intertechnology, Inc.
VISHAY SILICONIX

JITONG TECHNOLOGY
(CHINA HK & SZ)
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Part: SIF912EDZ-T1-E3

Maker: VISHAY

Pack: TSSOP

Stock: Reserved

Unit price for :

50: $6.46

100: $6.14

1000: $5.82

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Full text search : 7.4 A, 30 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 5 X 2 MM, ROHS COMPLIANT, POWERPAK-6

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FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K	TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 75A I(C) \| M:HL093HD5.6 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 150A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 100A I(C) \| M:HL093HW048 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 1KV V(BR)CES \| 50A I(C) TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 8A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 8A条一（c TRANSISTOR \| IGBT \| N-CHAN \| DUAL \| 1KV V(BR)CES \| 15A I(C) \| M:HL080HD5.3 晶体管\| IGBT的\|正陈\|双\| 1KV交五（巴西）国际消费电子展\|5A一（c）\|米：HL080HD5.3 TRANSISTOR \| IGBT POWER MODULE \| 3-PH BRIDGE \| 600V V(BR)CES \| 75A I(C) 晶体管\| IGBT功率模块\| 3 - PH值大桥\| 600V的五（巴西）国际消费电子展\| 75A条一（c	Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG

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