PART |
Description |
Maker |
HYM72V2005GS-60 HYM72V2005GS-50 HYM72V2005GS-50- |
-2M x 72-Bit EDO-DRAM Module 2M x 72-Bit EDO-DRAM Module (ECC - Module) 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 50 ns, DMA168
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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HYM324025GS-60 HYM324025GS-50 HYM324025S-60 HYM324 |
4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 60 ns, SMA72 4M x 32-Bit EDO-DRAM Module 4米32位江户记忆体模组 4M x 32-Bit EDO-DRAM Module 4M X 32 EDO DRAM MODULE, 50 ns, SMA72 4M x 32 Bit EDO DRAM Module
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INFINEON TECHNOLOGIES AG SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
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http:// SIEMENS AG
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AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time 5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time 5V 256KX16 CMOS DRAM (EDO) 5V 256K?6 CMOS DRAM (EDO) x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO) 5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation ALSC
|
HYB3164165ATL-60 HYB3164165ATL-50 HYB3164165ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power 4M x 16 Bit 8k EDO DRAM 4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version) From old datasheet system
|
Infineon SIEMENS[Siemens Semiconductor Group]
|
MSC2323258D-XXDS4 MSC2323258D-XXBS4 MSC2323258D MS |
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO From old datasheet system 2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO 2M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72 DPDT 10A MINI 115VAC 2097152字32位动态随机存储器模块:快速页面模式型与江
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OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD. Oki Electric Industry Co., Ltd.
|
HM5118165J-5 HM5118165J-6 HM5118165J-7 HM5118165TT |
16 M EDO DRAM (1-Mword x 16-bit) 1 k Refresh 1M X 16 EDO DRAM, 70 ns, PDSO50
|
ELPIDA MEMORY INC
|
HM5117805LJ-5 HM5117805S-6 HM5117805TT-5 HM5117805 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh 2M X 8 EDO DRAM, 50 ns, PDSO28
|
Elpida Memory, Inc. ELPIDA MEMORY INC
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AS4C4M4E1-50JC AS4C4M4E1-50TC AS4C4M4E1-50TI AS4C4 |
4M X 4 EDO DRAM, 60 ns, PDSO24 x4 EDO Page Mode DRAM
|
ALLIANCE SEMICONDUCTOR CORP
|
HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50 INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50 4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
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http:// SIEMENS A G SIEMENS AG
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