| PART |
Description |
Maker |
| MT46V32M16P-5BC MT46V32M16BN-6C |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
| HYMD512646CP8-H HYMD512646CP8J-D43 HYMD512646CP8J- |
184pin Unbuffered DDR SDRAM DIMMs
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
| M470T3354CZ0-E6 M470T2953CZ0-E6 M470T6554CZ0-E6 M4 |
32M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
DDR2 Unbuffered SODIMM 无缓冲DDR2内存的SODIMM
64M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200 ROHS COMPLIANT, SODIMM-200
128M X 64 DDR DRAM MODULE, 0.45 ns, ZMA200
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| HYS64D32000EDL-6-D |
32M X 64 DDR DRAM MODULE, 0.7 ns, ZMA200
|
QIMONDA AG
|
| MT8VDDT3264HDG-265A1 MT8VDDT3264HDG-262XX |
32M X 64 DDR DRAM MODULE, 0.75 ns, DMA200
|
|
| HYMP532U64BP6-Y5 |
32M X 64 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Hynix Semiconductor, Inc.
|
| HY5DU121622BT-D4 HY5DU12822BT HY5DU12822BTP-H HY5D |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM - 512Mb
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
| HYI25D512160DE-6 HYI25D512160DT-6 HYI25D512160DF-6 |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
32M X 16 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
32M X 16 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
32M X 16 DDR DRAM, 0.7 ns, PBGA60 PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PBGA60 GREEN, PLASTIC, TFBGA-60
64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
512Mb: x4, x8, x16 DDR SDRAM Features
128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
|
