| PART |
Description |
Maker |
| RFP-1500-19-50 RFP-1500-9-50 |
1930 MHz - 1990 MHz 50 ohm RF/MICROWAVE TERMINATION
925 MHz - 960 MHz 50 ohm RF/MICROWAVE TERMINATION
|
Anaren, Inc.
ANAREN INC
|
| AGR19060E AGR19060EF AGR19060EU |
60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| CU42JB1P-1950-1T CU48RA5L-250-2T CU49PB3L-600-6C C |
1900 MHz - 2000 MHz RF/MICROWAVE ISOLATOR
100 MHz - 400 MHz RF/MICROWAVE ISOLATOR
400 MHz - 800 MHz RF/MICROWAVE 3 PORT CIRCULATOR
1930 MHz - 1990 MHz RF/MICROWAVE ISOLATOR
|
|
| 1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| SM1920-52LD |
1930 - 1990 MHz 160 Watt Power Amplifier
|
Stealth Microwave, Inc.
|
| MHW1910D |
MHW1910-1 1930-1990 MHz, 10 W RF Power LDMOS Amplifier - Archived
|
Motorola
|
| XD010-24S-D2F |
1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier
|
sirenza.com
SIRENZA MICRODEVICES
|
| 1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
BJT 双极型晶体管
|
GHz Technology
Micrel Semiconductor, Inc.
|
| PTF191601 PTF191601E |
LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz
LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTFA192401F |
Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 ?1990 MHz
|
Infineon Technologies AG
|
| PTFA191001E PTFA191001F |
Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1930-1990 MHz
|
Infineon Technologies AG
|
