PART |
Description |
Maker |
IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??) From old datasheet system 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|
TP0205A-T1-E3 |
180 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
VISHAY SILICONIX
|
IRF240 |
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET 18A, 200V, 0.180 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
STH250N55F3-6 |
N-channel 55 V, 2.2 mOhm, 180 A, H2PAK, STripFET III Power MOSFET
|
ST Microelectronics
|
NTUD3129PT5G |
Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package
|
ON Semiconductor
|
NTUD3129P |
Small Signal MOSFET -20 V, -180 mA, Dual P-Channel, 1.0 x 1.0 mm SOT-963 Package
|
ON Semiconductor
|
STH180N10F3-2 |
N-channel 100 V, 3.9 milliohm, 180 A, H2PAK-2 STripFET III Power MOSFET
|
STMicroelectronics
|
MRF5P21180 |
2170 MHz, 180 W AVG., 2 x W?CDMA, 28 V Lateral N?Channel RF Power MOSFET From old datasheet system
|
Motorola
|
STH210N75F6-2 |
N-channel 75 V, 0.0027 Ohm typ., 180 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in H2PAK-2 package
|
ST Microelectronics
|
SPEAR-07-NC03 |
1 CHANNEL(S), 100M bps, LOCAL AREA NETWORK CONTROLLER, PBGA180 LEAD FREE, 12 X 12 MM, 1.70 MM HEIGHT, LFBGA-180
|
ST Microelectronics
|
FGA180N30D FGA180N30DTU |
300V PDP IGBT 180 A, 300 V, N-CHANNEL IGBT High Current Capability
|
Fairchild Semiconductor, Corp.
|
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