| PART |
Description |
Maker |
| STB70NF3LLT4 |
N-CHANNEL 30V - 0.0075 ohm - 70A D2PAK/TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
|
STMicroelectronics
|
| STP140NF75 B140NF75 P140NF75 STB140NF75 STB140NF75 |
N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripFET II POWER MOSFET
N-channel 75V - 0.0065 - 120A - D2PAK/I2/TO-220 STripFET III Power MOSFET
120 A, 75 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AB
|
STMICROELECTRONICS[STMicroelectronics]
|
| STB20NE06LT4 STB20NE06L |
N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET
N-CHANNEL 60V - 0.06 OHM - 20A D2PAK STRIPFET POWER MOSFET
THERMISTOR, PTC 2.50 OHM .10A 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 20A条（丁）|63AB
|
ST Microelectronics
ON Semiconductor
|
| PHU108NQ03LT PHU108NQ03LT127 PHB108NQ03LT PHD108NQ |
N-channel TrenchMOS logic level FET
75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PLASTIC, IPAK-3
N-channel TrenchMOS logic level FET
|
NXP Semiconductors N.V.
|
| MTB10N40E MTB10N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB2P50E_D ON2408 MTB2P50E MTB2P50E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount P-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 500 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| STB160NF03L 7460 |
N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET POWER MOSFET
N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFET⑩ POWER MOSFET
N-CHANNEL 30V - 0.0021ohm - 160A D2PAK STripFETPOWER MOSFET N沟道30V 0.0021ohm - 160A章采用D2PAK STripFET⑩功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| STB80NE03L-06 STB80NE03L-06-1 STB80NE03L-06T4 |
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET?/a> POWER MOSFET
N-CHANNEL 30V - 0.005 OHM - 80A D2PAK/I2PAK STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.005 OHM - 80A D2PAK/I2PAK STRIPFET POWER MOSFET
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET POWER MOSFET
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET⑩ POWER MOSFET
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PC01; No. of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Body Style:Straight
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| MTB4N80E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
| STB160NF02L 7459 |
N-CHANNEL 20V - 0.0018ohm - 160A D2PAK STripFET POWER MOSFET
N-CHANNEL 20V - 0.0018ohm - 160A D2PAK STripFET?/a> POWER MOSFET
N-CHANNEL 20V - 0.0018 OHM - 160A D2PAK STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 20V - 0.0018ohm - 160A D2PAK STripFET⑩ POWER MOSFET
N-CHANNEL 20V - 0.0018 OHM - 160A D2PAK STRIPFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MTP4N40E MTP4N40E-D |
TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM 4 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
Motorola, Inc
ON Semiconductor
|
