| PART |
Description |
Maker |
| NGB15N41CL NGB15N41ACLT4G NGB15N41CLT4G NGD15N41AC |
Ignition IGBT 15 A, 410 V N.Channel DPAK, D2PAK and TO.220
|
ON Semiconductor
|
| 041083053001WG 4108309 041083046001WG 041083050001 |
Power Relay 410 83 3 mm
|
Tyco Electronics
|
| HMC931LP4E HMC931LP4E1103 |
410° Analog Phase Shifter, 8 - 12 GHz
|
Hittite Microwave Corporation
|
| LZ2353 LZ2353B LZ2354BJ |
1/3-type CCD Area Sensors with 410 k Pixels 1/3-type传感器与防治荒漠化面410万像
|
Sharp, Corp.
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| APG2C1-410 |
Structure: InGaN Peak Wavelength: 410 nm Optical Output Power: typ. 125 mW Life Time: > 10.000 hours
|
Roithner LaserTechnik GmbH
|
| TT215N TT215N22KOC |
Netz-Thyristor-Modul Phase Control Thyristor Module
410 A, 2200 V, SCR
|
eupec GmbH
|
| MLO80100-00420 |
VCO, 410 MHz - 430 MHz
|
IXYS, Corp.
|
| NGB15N41CLT4G NGP15N41CLG NGB15N41CLT4 NGD15N41CL |
Ignition IGBT 15 Amps, 410 Volts
|
ONSEMI[ON Semiconductor]
|
| CNX410018E4124 CNX410018E4212 CNX410018E4106 CNX41 |
CNX 410 CABLE ASSEMBLY
CABLE ASSEMBLY
|
Visual Communications Company
Visual Communications Compa...
Visual Communications C...
Marl International Limi...
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| HI4-0508A-8 |
16-Channel, 8-Channel, Differential 8-Channel and Differential 4-Channel, CMOS Analog MUXs with Active Overvoltage Protection; Temperature Range: -55°C to 125°C; Package: 20-LCC 8-CHANNEL, SGL ENDED MULTIPLEXER, CQCC20
|
Intersil, Corp.
|
| UPA675T UPA675T-T1 UPA675T-T2 UPA675T-A |
100 mA, 16 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
N-channel enhancement type MOS FET
|
NEC
|
