PART |
Description |
Maker |
AM29845AJC AM29845A/BLA AM29845ADMB AM29845APC AM2 |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package; A IRG4BC30K with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50K with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC40U with Standard Packaging 600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package; Similar to IRG4PC40K with Lead Free Packaging 1200V UltraFast 8-25 kHz Single IGBT in a TO-274AA package; A IRGPS40B120U with Standard Packaging 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50U with Standard Packaging 1200V UltraFast 8-40 kHz Discrete IGBT in a TO-274AA package; A IRG4PSH71U with Standard Packaging 1200V UltraFast 4-20 kHz Discrete IGBT in a D2-Pak package; A IRG4BH20K-S with Standard Packaging 600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package; A IRG4PC50F with Standard Packaging 1200V UltraFast 5-40 kHz Discrete IGBT in a TO-247AC package; A IRG4PH50U with Standard Packaging 10-Bit D-Type Latch 600V Warp 60-150 kHz Discrete IGBT in a TO-262 package; A IRG4BC40WL with Standard Packaging 8位D型锁存器 8-Bit D-Type Latch 8位D型锁存器
|
Bourns, Inc.
|
IRG4IBC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
25MT060WF |
FULL-BRIDGEIGBTMTP FULL-BRIDGE IGBT MTP 600V Warp 20-100 kHz Full-Bridge IGBT in a MTP package
|
InternationalRectifier IRF[International Rectifier]
|
IRG4PSC71K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
CY3130 CY3130R62 |
Warp Enterprise VHDL CPLD Software Warp Enterprise垄芒 VHDL CPLD Software
|
Cypress Semiconductor
|
IRFPF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package HEXFET? Power MOSFET Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 900V,的Rds(on)\u003d 3.7ohm,身份证\u003d 3.6A
|
International Rectifier, Corp.
|
FQPF9N90C FQP9N90C |
900V N-Channel Advance Q-FET C-Series 900V N-CHANNEL MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFIBF30G IRFIBF30GPBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=1.9A)
|
IRF[International Rectifier]
|
IRFPF50 IRFPF50PBF |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package Power MOSFET(Vdss=900V, Rds(on)=1.6ohm, Id=6.7A)
|
International Rectifier
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