PART |
Description |
Maker |
BB301CAW-TL-E |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB302MBW-TL-E BB302M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB504C |
Built in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1017 TBB1017SMTL-E |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB100211 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
TBB1010KMTL-H TBB101011 |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
BB301C BB301 |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
|
BB402M |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Hitachi Semiconductor
|
BB502C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|