| PART |
Description |
Maker |
| CY7C1529JV18-250BZXC CY7C1529JV18-250BZXI CY7C1529 |
8M X 9 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1427AV18-250BZI |
36-Mbit DDR-II SRAM 2-Word Burst Architecture 4M X 9 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1518JV18-250BZC CY7C1518JV18-300BZXC |
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570K |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1250V18-300BZI CY7C1246V18-333BZI CY7C1246V18- |
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 36兆位的DDR - II SRAM2字突发架构（2.0周期读写延迟
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 1M X 36 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1548V18-300BZC CY7C1548V18-300BZI CY7C1548V18- |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) 8M X 8 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| GS8662D09E-333I GS8662D08E GS8662D09GE-200I GS8662 |
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 72Mb SigmaQuad -Ⅱ的4 SRAM的突
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
72Mb SigmaQuad-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| K7K1636T2C K7K1618T2C K7K1618T2C-EI330 K7K1618T2C- |
512Kx36 & 1Mx18 DDRII CIO b2 SRAM
1M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Samsung semiconductor
|
| UPD44164082F5-E50-EQ1 UPD44164362F5-E50-EQ1 UPD441 |
18M-BIT DDRII SRAM 2-WORD BURST OPERATION 1800万位的SRAM 2条DDRII字爆发运
2M X 8 DDR SRAM, 0.45 ns, PBGA165
|
NEC, Corp.
|
| GS8662R09E-167I GS8662R09GE-167I GS8662R18GE-333I |
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.5 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 9 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 2M X 36 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.45 ns, PBGA165
72Mb SigmaCIO DDR-II Burst of 4 SRAM 8M X 8 DDR SRAM, 0.5 ns, PBGA165
|
GSI Technology, Inc.
|
| IS61DDPB21M36A-333M3LI IS61DDPB21M36A-300M3I IS61D |
1M X 36 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.20 MM HEIGHT, LEAD FREE, LFBGA-165
1M X 36 DDR SRAM, 0.45 ns, PBGA165 15 X 17 MM, 1.20 MM HEIGHT, LFBGA-165
|
Integrated Silicon Solution, Inc.
|
