PART |
Description |
Maker |
EDE2516AASE-AE-E EDE2516AASE-DF-E |
16M X 16 DDR DRAM, 0.5 ns, PBGA84 16M X 16 DDR DRAM, 0.45 ns, PBGA84
|
ELPIDA MEMORY INC
|
EDR2518ABSE-8C EDR2518ABSE-8C-E EDR2518ABSE-AD-E E |
CHOKE RF HI CURRENT 150UH 10% Circular Connector; No. of Contacts:37; Series:MS27467; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:15-35 RoHS Compliant: No 288M bits Direct Rambus DRAM 16M X 18 DIRECT RAMBUS DRAM, PBGA80
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
HY5PS121621AF HY5PS121621AF-C3 HY5PS121621AF-C4 HY |
512Mb DDR2 SDRAM 32M X 16 DDR DRAM, PBGA84 ROHS COMPLIANT, FBGA-84 32M X 16 DDR DRAM, PBGA84 FBGA-84
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
MC-4R128FKK8K-840 MC-4R128FKK8K |
128MB 32-bit Direct Rambus DRAM RIMM Module 128MB2位直接Rambus的内存RIMM的模 128MB 32-bit Direct Rambus DRAM RIMM Module 64M X 18 DIRECT RAMBUS DRAM MODULE, DMA232
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
IBM13M16734BCD |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块)
|
IBM Microeletronics
|
HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
MC-4516CD646 |
16M-Word By 64-BIT Dynamic RAM Module(16M×64位动态RAM模块)
|
NEC Corp.
|
HYM72V1645GU-60 HYM72V1645GU-50 HYM64V1645GU-60 HY |
3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 3.3 16米x 64位江户内.3V6米x 72位江户记忆体模组 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module 16M X 64 EDO DRAM MODULE, 60 ns, DMA168 16M x 64 Bit DRAM Module unbuffered 16M x 72 Bit ECC DRAM Module unbuffered
|
SIEMENS A G SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
MX23L1651MC-50G MX23L1651 MX23L1651HC-15 |
16M-BIT [16M x 1] CMOS SERIAL MASK-ROM
|
MCNIX[Macronix International]
|
IBM13M16734BCA |
16M x 72 1-Bank Registered SDRAM Module(16M x 72 1组寄存同步动态RAM模块)
|
IBM Microeletronics
|
KMM53216000BV |
16M x 32 DRAM SIMM(16M x 32 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|