PART |
Description |
Maker |
HYMP125R72M4-E3/C4 HYMP125R72MP4-E3/C4 HYMP512R724 |
Versatile Miniature Switch, High Performance 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb 1st ver. 64M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
MT8VDDT3232UG-75XX MT8VDDT12832UY-75XX MT8VDDT6432 |
32M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 DIMM-100 128M X 32 DDR DRAM MODULE, 0.75 ns, DMA100 LEAD FREE, DIMM-100 64M X 32 DDR DRAM MODULE, 0.75 ns, DMA100
|
Lattice Semiconductor, Corp.
|
HYMD512M646CLFP8-D43 HYMD512M646CLFP8-J HYMD512M64 |
200pin DDR SDRAM SO-DIMMs based on 512Mb C ver. (FBGA) 128M X 64 DDR DRAM MODULE, 0.7 ns, DMA200
|
Hynix Semiconductor HYNIX SEMICONDUCTOR INC
|
HYMD512646B8-H HYMD512646B8J-D43 HYMD512646B8J-J H |
1184pin Unbufferd DDR SDRAM DIMMs 128M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 ROHS COMPLIANT, DIMM-184
|
Hynix Semiconductor http:// Foxconn Technology Co., Ltd.
|
HYMP125P72AP4-Y5 HYMP112P72AP8-Y5 HYMP112P72AP8-C4 |
256M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM MODULE, 0.45 ns, DMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240 256M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 512M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
|
Hynix Semiconductor, Inc. HYNIX SEMICONDUCTOR INC
|
EBJ11ED8CAFA-DJ-E |
128M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
HYMP512U64CP8-S6 |
128M X 64 DDR DRAM MODULE, 0.4 ns, ZMA240
|
HYNIX SEMICONDUCTOR INC
|
EBJ10EE8BAFA-AG-E |
128M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
M392T2950CZA-CF7 M392T6553CZA-CD5 M392T2950CZA-CD5 |
128M X 72 DDR DRAM MODULE, 0.4 ns, DMA240 ROHS COMPLIANT, DIMM-240 64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM MODULE, 0.5 ns, DMA240 ROHS COMPLIANT, DIMM-240 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240 ROHS COMPLIANT, DIMM-240
|
Samsung Semiconductor Co., Ltd.
|
NT1GD64S8PA0F-6K |
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184
|
Nanya Technology, Corp.
|
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