| PART |
Description |
Maker |
| MTE53N50E MTE53N50E_D ON2535 ON2534 |
From old datasheet system
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MOTOROLA[Motorola, Inc]
ON Semi
Motorola Mobility Holdings, Inc.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| IRF840 IRF820 IRFE430-JQR-B IRF741 IRFE210-JQR-BE4 |
8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2.5 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
2.5 A, 500 V, 1.725 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
1.8 A, 200 V, 1.725 ohm, Si, POWER, MOSFET
1.2 A, 400 V, 4.15 ohm, N-CHANNEL, Si, POWER, MOSFET
3.1 A, 100 V, 0.69 ohm, N-CHANNEL, Si, POWER, MOSFET
28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
SEMELAB LTD
|
| PDTD113E PDTD113ET PDTD113EK PDTD113ES |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k-ohm, R2 = 1 k-ohm
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| IRF9640 RF1S9640SM FN2284 |
11A/ 200V/ 0.500 Ohm/ P-Channel Power MOSFETs
From old datasheet system
11A 200V 0.500 Ohm P-Channel Power MOSFETs
11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| PPF430E |
N Channel MOSFET; Package: SMD-.5; ID (A): 2.6; RDS(on) (Ohms): 1.5; PD (W): 125; BVDSS (V): 500; Rq: 1; 4.3 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| IRFF210 FN1887 |
2.2A/ 200V/ 1.500 Ohm/ N-Channel Power MOSFET
From old datasheet system
2.2A, 200V, 1.500 Ohm, N-Channel Power MOSFET
|
Intersil Corporation
|
| STW19NM50N STF19NM50N STP19NM50N |
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-247
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP
|
ST Microelectronics
|
| SFF450/61 SFF450-61 |
13 AMP 500 Volts 0.40 OHM N-Channel POWER MOSFET
13 AMP 500 Volts 0.40 OHM N-Channel POWER MOSFET 13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-61
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| IRF450 |
13 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
|
MICROSEMI CORP-LAWRENCE
|
| 2SK1524 FP15W50 |
15 A, 500 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| NDF11N50ZG NDF11N50ZH |
N-Channel Power MOSFET 500 V, 0.52 Ohm
|
ON Semiconductor
|
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