| PART |
Description |
Maker |
| MGFC5109 C5109A |
From old datasheet system
Ka-Band 3-Stage Self Bias Low Noise Amplifier
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC5110 C5110A |
Ka-Band 3-Stage Self Bias Low Noise Amplifier
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ATF-35143-BLK DEMO-ATF3X14-32 |
Single stage 2 GHz LNA demonstration board for ATF-3x143 series ultra low noise PHEMTs
TRANSISTOR,HEMT,N-CHAN,5.5V V(BR)DSS,40MA I(DSS),SOT-343R
|
Agilent Technologies
|
| ZNBG3010 ZNBG3010Q16 ZNBG3011 ZNBG3011Q16 |
Polarity switch and FET bias controller
FET BIAS CONTROLLER AND POLARITY SWITCH
Bias Generator with Polarity Selection Control
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| STB7002TR STB7002 7002 |
1.8 GHZ THREE GAIN LEVEL LNA
1.8GHz THREE GAIN LEVEL LNA
1805 MHz - 1880 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
ST Microelectronics
http://
STMicroelectronics
意法半导
|
| MGF1601B MGF1601B11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0805A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0910A MGF0910A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0917A MGF0917A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0918A MGF0918A11 |
High-power GaAs FET (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0909A11 |
High-power GaAs FET(small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MC13142D |
LOW POWER DC - 1.8 GHz LNA, MIXER and VCO
LOW POWER DC - 1.8 GHz LNA MIXER and VCO
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
