| PART |
Description |
Maker |
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| AS4C256K16E0 AS4C256K16E0-30JC AS4C256K16E0-35JC A |
5V 256K x 16 CM0S DRAM (EDO), 50ns RAS access time
5V 256K x 16 CM0S DRAM (EDO), 35ns RAS access time
5V 256KX16 CMOS DRAM (EDO)
5V 256K?6 CMOS DRAM (EDO)
x16EDOPageModeDRAM
5V256KxCMOSDRAM(EDO)
5V 256K x CMOS DRAM (EDO)
5V 256K x 16 CM0S DRAM (EDO), 30ns RAS access time
|
Alliance Semiconductor Corporation
ALSC
|
| HYB5118165BST-60 HYB5118165BST-50 HYB5118165BSJ-60 |
1M x 16 Bit 1k 5 V 60 ns EDO DRAM
1M x 16 Bit 1k 3.3 V 60 ns EDO DRAM
1M x 16 Bit 1k 5 V 50 ns EDO DRAM
-1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16 Bit 1k 3.3 V 50 ns EDO DRAM
1M x 16-Bit Dynamic RAM 1k Refresh (Hyper Page Mode-EDO)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns
1M x 4 Bit EDO DRAM 3.3 V 60 ns
-1M x 4-Bit Dynamic RAM
1M x 4 Bit EDO DRAM 3.3 V 70 ns
1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IS41C82002-50TI IS41LV82002-50T IS41C82002-60T IS4 |
x8 EDO Page Mode DRAM x8 EDO公司页面模式的DRAM
2M X 8 EDO DRAM, 60 ns, PDSO28
2M X 8 EDO DRAM, 50 ns, PDSO28
|
Atmel, Corp.
INTEGRATED SILICON SOLUTION INC
|
| HYM5V64834ASLTZG-60 HYM5V64834ASLTZG-50 HYM5V64834 |
8M X 64 EDO DRAM MODULE, 50 ns, DMA144 SODIMM-144
x64 EDO Page Mode DRAM Module X64的EDO公司页面模式内存模块
|
Hynix Semiconductor, Inc.
NXP Semiconductors N.V.
|
| IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
|
| HM51W16165 HM51W16165J-5 HM51W16165J-6 HM51W16165J |
1M X 16 EDO DRAM, 60 ns, PDSO44
16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh
|
ELPIDA MEMORY INC
|
| HYM72V2005GS-60 HYM72V2005GS-50 HYM72V2005GS-50- |
-2M x 72-Bit EDO-DRAM Module
2M x 72-Bit EDO-DRAM Module (ECC - Module)
2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| HYM564214AH-60 HYM572103LN-70 HYNIXSEMICONDUCTORIN |
2M X 64 EDO DRAM MODULE, DMA200
1M X 72 FAST PAGE DRAM MODULE, DMA168
2M X 64 FAST PAGE DRAM MODULE, DMA72
1M X 64 EDO DRAM MODULE, DMA72
2M X 32 EDO DRAM MODULE, DMA72
|
HYNIX SEMICONDUCTOR INC
|
| HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 |
16M EDO DRAM (4-Mword x 4-bit), 50ns
16M EDO DRAM (4-Mword x 4-bit), 60ns
16M EDO DRAM (4-Mword x 4-bit), 70ns
|
Elpida Memory
|
