PART |
Description |
Maker |
HM64YLB36512BP-33 HM64YLB36512BP-28 HM64YLB36512-1 |
512K X 36 LATE-WRITE SRAM, 1.6 ns, PBGA119 16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
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Renesas Electronics Corporation
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GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209 36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
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GSI Technology, Inc.
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A65H83181 A65H83181P-5 A65H83181P-6 |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
|
AMIC Technology
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A65H73361P-7 A65H73361P-6 A65H83181P-6 A65H83181P- |
128K x 36 & 256K x 18 Late Write Synchronous Fast SRAM with Pipelined Data Output
|
AMIC Technology Corporation
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GS8170DW36C GS8170DW36C-200 GS8170DW36C-250 GS8170 |
18Mb B>1x1Dp CMOS I/O Double Late Write SigmaRAM 18Mb x1Dp CMOS I/O Double Late Write SigmaRAM 256K X 72 STANDARD SRAM, 2.25 ns, PBGA209
|
GSI Technology, Inc.
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K7P323688M-HC250 K7P323688M-GC250 |
1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119 1M X 36 LATE-WRITE SRAM, 2 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANCE, BGA-119
|
TOKO, Inc.
|
GS8330DW36 GS8330DW72 |
(GS8330DW36/72) 36M Double Late Write SRAM
|
GSI Technology
|
MCM63R818FC3.7R |
256K X 18 LATE-WRITE SRAM, 1.85 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, PLASTIC, FLIP CHIP, BGA-119
|
Motorola Mobility Holdings, Inc.
|
AS7C33128PFD32_36B AS7C33128PFD36B-200TQIN AS7C331 |
Sync SRAM - 3.3V LM397 Single General Purpose Voltage Comparator; Package: SOT-23; No of Pins: 5; Qty per Container: 1000; Container: Reel 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 4 ns, PQFP100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 36 STANDARD SRAM, 4 ns, PQFP100 128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, TQFP-100 128K X 32 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100 128K X 36 STANDARD SRAM, 4 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3 ns, PQFP100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 3.5 ns, PQFP100 3.3V 128K X 32/36 pipeline burst synchronous SRAM 3.3 128K的X 32/36管道爆裂同步SRAM
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Alliance Semiconductor Corp... ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Integrated Silicon Solution, Inc.
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WMS128K8V-17 WMS128K8V-35 WMS128K8V-20DRMA WMS128K |
128Kx8 3.3V Monolithic SRAM(128Kx8,3.3V,单片静态RAM(存取时7ns 128Kx8 3.3单片的SRAM28Kx83.3伏,单片静态随机存储器(存取时间为35ns)) 128K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32 128K X 8 STANDARD SRAM, 15 ns, CDSO32 CERAMIC, SOJ-32 128K X 8 STANDARD SRAM, 17 ns, CDIP32 SINGLE CAVITY, SIDE BRAZED, CERAMIC, DIP-32 128K X 8 STANDARD SRAM, 20 ns, CDFP32
|
White Electronic Designs Corporation White Electronic Designs, Corp.
|
CY14V101NA-BA25XI CY14V101NA-BA25XIT CY14V101NA-BA |
1-Mbit (128 K x 8/64 K x 16) nvSRAM Infinite read, write, and recall cycles 128K X 8 NON-VOLATILE SRAM, 25 ns, PBGA48
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http:// CYPRESS SEMICONDUCTOR CORP
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