PART |
Description |
Maker |
2N7002E11 2N7002ET1G 2N7002ET3G |
Small Signal MOSFET 60 V, 310 mA, Single, N.Channel, SOT.23 Small Signal MOSFET 60 V, 310 mA, TRENCH, N-Channel 260 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Small Signal MOSFET
|
ON Semiconductor
|
NX3008NBK NX3008NBK-15 |
30 V, 400 mA N-channel Trench MOSFET SMALL SIGNAL, FET
|
NXP Semiconductors N.V.
|
NX3008NBKS NX3008NBKS-15 |
30 V, 350 mA dual N-channel Trench MOSFET SMALL SIGNAL, FET
|
NXP Semiconductors N.V.
|
NX3008PBKS NX3008PBKS-15 |
30 V, 200 mA dual P-channel Trench MOSFET SMALL SIGNAL, FET
|
NXP Semiconductors N.V.
|
NTJD2152P NTJD2152PT2 NTJD2152PT1 NTJD2152PT4G NTJ |
Trench Small Signal MOSFET 8 V Dual P-Channel, ESD Protection
|
ONSEMI[ON Semiconductor]
|
BSS119 Q67000-S007 Q67000-S063 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 16 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor SIPMOS ? Small-Signal Transistor From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
FDS4435 FDS4435D84Z FDS4435F011 |
P-Channel Logic Level PowerTrenchTM MOSFET 8800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 9000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 8.8 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD SEMICONDUCTOR CORP
|
BSP316P |
Low Voltage MOSFETs - Small Signal MOSFET, -100V, SOT-223, RDSon =1.80 SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSP317P |
Low Voltage MOSFETs - Small Signal MOSFET, -250V, SOT-223, RDSon = 4 SIPMOS Small-Signal-Transistor
|
INFINEON[Infineon Technologies AG]
|
BSP373 |
Low Voltage MOSFETs - Small-Signal MOSFET, 100V, SOT-223, RDSon=0.3 Ohm, 1.7A, NL SIPMOS Small-Signal Transistor
|
INFINEON[Infineon Technologies AG]
|
STK7002F |
Small Signal TR > Small Signal MOSFET N-CHANNEL ENHANCEMENT-MODE MOSFET
|
AUK corp
|
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