PART |
Description |
Maker |
CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics. 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165 18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位(为512k × 36 / 1兆位× 18)流水线双氰胺同步静态存储器
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Cypress Semiconductor Corp.
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M68AF511A M68AF511AL55MC1T M68AF511AL55MC6T M68AF5 |
4 Mbit (512K x8) / 5V Asynchronous SRAM 4 Mbit (512K x8), 5V Asynchronous SRAM(512K X 8 SRAM 5V SOP32 ,I-Temp) 4 Mbit (512K x8), 5V Asynchronous SRAM 4兆位(为512k × 8),5V的异步SRAM
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STMICROELECTRONICS[STMicroelectronics] ST Microelectronics 意法半导 STMicroelectronics N.V.
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CY7C1371D-100AXI CY7C1371D-100BGI CY7C1373D-100BZI |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 18兆位(为512k × 36/1M × 18)流体系结构,通过与NoBLTM的SRAM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA119 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PQFP100 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 1M X 18 ZBT SRAM, 6.5 ns, PBGA165 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBLTM Architecture 512K X 36 ZBT SRAM, 8.5 ns, PBGA119
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY62157ELL-55ZSXE CY62157ELL-55BVXE CY62157ELL-45Z |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 55 ns, PBGA48 8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PDSO44
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Cypress Semiconductor Corp.
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HY29LV800 HY29LV800T-55 HY29LV800T-55I HY29LV800T- |
8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory 8兆位00万x 8/512K × 16)低压快闪记忆体
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Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
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CY62148ELL-55SXA |
4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
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Cypress Semiconductor, Corp.
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CY62148ELL-55SXIT |
CY62148E MoBL® 4-Mbit (512K x 8) Static RAM 512K X 8 STANDARD SRAM, 55 ns, PDSO32
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Cypress Semiconductor, Corp.
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CY7C1460AV25 CY7C1462AV25 |
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM)
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Cypress Semiconductor Corp.
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CY7C1355C-117BGC CY7C1355C-117BGI CY7C1355C-117BZC |
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9兆位56 × 36/512K × 18)流体系结构,通过与总线延迟静态存储器
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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SST29VF010-70-4C-NH SST29SF010-70-4C-NH SST29SF040 |
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 2.7V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 2.7V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 2.7V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 55 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 55 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 128K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 70 ns, PDIP32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PDIP32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 256K X 8 FLASH 5V PROM, 70 ns, PDIP32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512K X 8 FLASH 5V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 2.7V PROM, 70 ns, PQCC32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 64K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Small-Sector Flash 512千位/ 1兆位/ 2 4兆位(8)小部门闪光
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Silicon Storage Technol... SILICON STORAGE TECHNOLOGY INC Elektron Technology PLC Silicon Storage Technology, Inc.
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28F800BV-B 28F800BV-T 28F008BE-T/B TE28F800CVB90 P |
Dual-Slot, PCMCIA Analog Power Controller 8-MBIT (512K X 16. 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY Quad Network Power Controller for Power-Over-LAN 8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 8兆位(为512k × 16024K × 8)SmartVoltage启动块闪存系 8-MBIT (512K X 16/ 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
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Intel Corporation
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IS41C85120-60K IS41C85120-60KI IS41C85120-35K IS41 |
512K x 8 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 512K X 8 EDO DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
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