| PART |
Description |
Maker |
| BT138F BT138F-500 BT138F-500F BT138F-500G BT138F-6 |
DIODE ZENER TRIPLE ISOLATED 200mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 18Vz 0.05mA-Izt 0.05 0.05uA-Ir 13.6 SOT-363 3K/REEL
DIODE ZENER TRIPLE BI-DIRECTIONAL 200mW 24Vz 0.05mA-Izt 0.05 0.05uA-Ir 18.2 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 27Vz 0.05mA-Izt 0.05 0.05uA-Ir 20.4 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 22Vz 0.05mA-Izt 0.05 0.05uA-Ir 16.7 SOT-363 3K/REEL
Octal Bus Transceivers with 3-State Outputs 20-LCCC -55 to 125
Triacs
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| A3964SB A3964SLB 3964 |
DUAL FULL-BRIDGE PWM MOTOR DRIVER
From old datasheet system
DIODE SWITCHING QUAD COMMON-CATHODE 70V 250mA-Io 200mW 4ns-trr SOT-353 3K/REEL
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| A3962 3962 A3962SLB |
DUAL FULL-BRIDGE PWM MOTOR DRIVER
From old datasheet system
DIODE SWITCHING DUAL-DUAL COMMON-CATHODE 70V 250mA-Io 200mW 4ns-trr SOT-363 3K/REEL
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/ |
DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8
DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
|
| SPX2937U3-8.0 SPX2937 SPX2937M3-10 SPX2937M3-12 SP |
DIODE ZENER SINGLE 150mW 33Vz 2mA-Izt 0.0606 0.1uA-Ir 23.1 SOT-523 3K/REEL
DIODE ZENER DUAL ISOLATED 200mW 33Vz 2mA-Izt 0.0606 0.1uA-Ir 23.1 SOT-363 3K/REEL
TRANS PREBIASED PNP SOT323
DIODE ZENER SINGLE 300mW 36Vz 2mA-Izt 0.0556 0.1uA-Ir 25.2 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 33Vz 2mA-Izt 0.0606 0.1uA-Ir 23.1 SOT-363 3K/REEL
500mA Low Dropout Voltage Regulators 500mA的低压差稳压
|
SIPEX[Sipex Corporation]
|
| Q62901-B13-C Q62901-B16-A Q62704-Y12 Q62704-Y12-B |
NPN Silicon Planar Trnasistors NPN硅平Trnasistors
NPN Silicon Planar Trnasistors NPN硅平面Trnasistors
DIODE SCHOTTKY DUAL COMMON-CATHODE 50V 200mW 0.41V-vf 70mA-IFM 1mA-IF 0.1uA-IR SOT-323 3K/REEL NPN硅平面Trnasistors
DIODE SCHOTTKY DUAL COMMON-ANODE 50V 200mW 0.41V-vf 70mA-IFM 1mA-IF 0.1uA-IR SOT-323 3K/REEL NPN硅平面Trnasistors
DIODE SCHOTTKY SINGLE 50V 200mW 0.41V-vf 70mA-IFM 1mA-IF 0.1uA-IR SOT-323 3K/REEL NPN硅平面Trnasistors
OSC PROG BLANK 3.3V LVDS SMD
|
Siemens Semiconductor G...
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
http://
|
| MMBD6050LT3G MMBD6050LT1G |
Switching Diode SOT23 70V ; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 10000 0.2 A, 70 V, SILICON, SIGNAL DIODE, TO-236AB
|
ON Semiconductor
|
| UPC2539 UPC2539GS |
DIODE ZENER DUAL ISOLATED 200mW 6Vz 20mA-Izt 0.05 5uA-Ir 3.5 SOT-363 3K/REEL RDS数据解调器IC
RDS DATA DEMODULATOR IC
|
NEC, Corp.
NEC[NEC]
|
| IS82C37A CS82C37A CS82C37A-12 CS82C37A-5 5962-9054 |
CMOS High Performance Programmable DMA Controller
RECTIFIER BRIDGE 10A 100V BR-6 高性能的CMOS可编程DMA控制
CMOS High Performance Programmable DMA Controller 4 CHANNEL(S), 12.5 MHz, DMA CONTROLLER, CDIP40
CMOS High Performance Programmable DMA Controller 4 CHANNEL(S), 12.5 MHz, DMA CONTROLLER, UUC40
DIODE SCHOTTKY DUAL-DUAL COMMON-CATHODE 25V 200mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-363 3K/REEL 4 CHANNEL(S), 12.5 MHz, DMA CONTROLLER, PDIP40
CMOS High Performance Programmable DMA Controller 高性能的CMOS可编程DMA控制
DIODE SCHOTTKY DUAL ISOLATED 25V 200mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-363 3K/REEL
DIODE SCHOTTKY DUAL SERIES 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
Triple 3-input positive-NAND gates 14-PDIP 0 to 70
RECTIFIER BRIDGE 10A 800V BR-6
RECTIFIER BRIDGE 10A 1000V BR-6
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| CDBK70 |
Small Signal Schottky Diodes, V-RRM=70V, V-R=70V, I-O=70mA
|
Comchip Technology
|
