PART |
Description |
Maker |
GS816033T-166I GS816019T-133 GS816019T-150 GS81601 |
166MHz 512K x 32 synchronous SRAM 133MHz 1M x 18 synchronous SRAM 150MHz 1M x 18 synchronous SRAM 166MHz 1M x 18 synchronous SRAM 200MHz 1M x 18 synchronous SRAM 225MHz 1M x 18 synchronous SRAM 250MHz 1M x 18 synchronous SRAM
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GSI Technology
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AS7C256 AS7C256-10 AS7C256-10JC AS7C256-10PC AS7C2 |
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix) High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 高性能32Kx8 CMOS SRAM High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 10 ns, PDIP28 High Performance 32Kx8 CMOS SRAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
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ETC[ETC] ALSC[Alliance Semiconductor Corporation] Alliance Semiconductor, Corp. Alliance Semiconductor ...
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EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM SRAM MCP SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3 15ns; 3.3V power supply; 128K x 24 SRAM
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Electronic Theatre Controls, Inc. White Electronic Designs
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R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit) Memory>Fast SRAM>Asynchronous SRAM
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Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit) Memory>Fast SRAM>Asynchronous SRAM
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SRAM Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
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HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
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Renesas Technology / Hitachi Semiconductor
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GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM 150MHz 9ns 64K x 32 2M synchronous burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100 64K X 32 CACHE SRAM, 12 ns, PQFP100 64K X 32 CACHE SRAM, 10 ns, PQFP100 5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器 2M Synchronous Burst SRAM 200万同步突发静态存储器 Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm 64K x 32 / 2M Synchronous Burst SRAM 117MHz 11ns 64K x 32 2M synchronous burst SRAM 66MHz 18ns 64K x 32 2M synchronous burst SRAM
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GSI Technology Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
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CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V1 |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165 2M X 8 DDR SRAM, 0.45 ns, PBGA165
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Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
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CY7C1350 7C1350 |
128Kx36 Pipelined SRAM with NoBL Architecture(带NoBL结构28Kx36流水线式 SRAM) 128K × 36至流水线与总线延迟静态存储器体系结构(带总线延迟结构28K × 36至流水线式的SRAM 128Kx36 Pipelined SRAM with NoBL Architecture(B>NoBL结构28Kx36流水线式 SRAM) From old datasheet system
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Cypress Semiconductor Corp.
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HY62256A HY62256AJ HY62256AJ-I HY62256ALJ HY62256A |
32Kx8bit CMOS SRAM, standby current=25uA, 70ns 32Kx8bit CMOS SRAM, standby current=25uA, 55ns 32Kx8bit CMOS SRAM, standby current=25uA, 85ns 32Kx8bit CMOS SRAM, standby current=100uA, 70ns 32Kx8bit CMOS SRAM, standby current=100uA, 85ns 32Kx8bit CMOS SRAM, standby current=1mA, 70ns 32Kx8bit CMOS SRAM, standby current=1mA, 85ns 32Kx8bit CMOS SRAM, standby current=1mA, 55ns 32Kx8bit CMOS SRAM 32Kx8bit CMOS SRAM Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 32Kx8bit CMOS SRAM JT 22C 22#22D SKT RECP 32Kx8bit CMOS SRAM
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. ETC HYNIX[Hynix Semiconductor] http://
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EDI8C32128C WS128K32-XXX EDI8C32128LP17EI |
128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块(存取时5705555ns 128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块(存取时5705555ns 128Kx32 SRAM Module(低功耗CMOS12Kx32静态RAM模块(存取时57055555ns 128Kx32 SRAM Module(低功耗CMOS28Kx32静态RAM模块(存取时57205555ns 128Kx32 SRAM的模块(低功耗的CMOS28Kx32静态内存模块(存取时间15,17,20,25,35,45,55纳秒)) 128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68
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White Electronic Designs Corporation TE Connectivity, Ltd.
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