PART |
Description |
Maker |
2SK2792 A5800302 |
Transistors > MOS FET > Power MOS FET From old datasheet system Switching (600V, 4A)
|
ROHM
|
RJK6011DJA-15 |
600V - 0.1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6035DPP-E0 RJK6035DPP-E0-15 |
600V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6025DPD |
600V - 1A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK6012DPP-E0 |
600V - 10A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJQ6020DPM |
600V - 20A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S5DPQ-E0 RJK60S5DPQ-E0-T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK60S7DPK-M0 RJK60S7DPK-M0-T0 |
600V -30A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJL60S5DPK-M0 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
2SJ357 D10803EJ3V0DS00 2SJ357-T1 2SJ357-T2 |
P-channel MOS FET(-30V, -3A) P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH From old datasheet system
|
NEC[NEC]
|
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor http://
|